FDS6673BZ The FDS6673BZ is a P-Channel MOSFET from onsemi, rated for -30V drain-source voltage and -14.5A continuous drain current. It features a low on-resistance of 7.8mOhm typical at 10V gate drive.
Mfr Part #:

FDS6673BZ

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDS6673BZ is a P-Channel MOSFET from onsemi, rated for -30V drain-source voltage and -14.5A continuous drain current. It features a low on-resistance of 7.8mOhm typical at 10V gate drive.
✓ Total Stock: 4,776 pcs
$ Price Range: $0.59 - $1.71

FDS6673BZ Available from 4 distributors

✓ Authorised
✓ Non-Authorised

FDS6673BZ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDS6673BZ Description

Short technical summary and product information.

The FDS6673BZ is a P-Channel MOSFET manufactured by onsemi using advanced PowerTrench technology. It is designed for power management and load switching applications in notebook computers and portable battery packs. The device offers a maximum drain-source voltage of -30V and a continuous drain current of -14.5A at 25°C ambient. The on-resistance is typically 6.5mOhm with a maximum of 7.8mOhm at Vgs = -10V and Id = -14.5A. At lower gate drive of -4.5V, the typical on-resistance is 9.6mOhm with a maximum of 12mOhm. The gate threshold voltage ranges from -1V to -3V. The device features an extended gate-source voltage range of ±25V, suitable for battery applications. It also provides ESD protection of 6.5kV typical (HBM). The MOSFET is housed in an 8-pin SOIC package (0.154" width) with surface mount mounting. It is supplied in tape and reel packaging with 2500 units per reel. The device is Pb-free, Halide-free, and RoHS compliant. Thermal characteristics include a junction-to-ambient thermal resistance of 50°C/W and junction-to-case of 25°C/W. The operating junction temperature range is -55°C to +150°C.

FDS6673BZ Quick Information

Product Type: P-Channel MOSFET
Series: PowerTrench
Canonical Name: P-Channel MOSFET, -30V, -14.5A, 7.8mOhm, SOIC-8
Subcategory: P-Channel MOSFET

FDS6673BZ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDS6673BZ Estimated Pricing

Qty Low High
1+ $1.71 $1.71
10+ $1.06 $1.06
100+ $0.75 $0.75
500+ $0.59 $0.59
2,500+ $0.59 $0.59

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS6673BZ Features

  • Low on-resistance of 7.8mOhm maximum.
  • Extended gate voltage range of ±25V.
  • ESD protection rated at 6.5kV typical.
  • Pb-free and RoHS compliant.
  • Surface mount SOIC-8 package.

FDS6673BZ Applications

  • Power management in notebook computers.
  • Load switching in portable battery packs.
  • Battery protection circuits.
  • DC-DC converter applications.

FDS6673BZ FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

-30V maximum.

What package does the FDS6673BZ come in?

8-SOIC (0.154", 3.90mm Width) surface mount package.

What is the operating temperature range?

-55°C to +150°C junction temperature.

Is the FDS6673BZ RoHS compliant?

Yes, it is RoHS3 compliant, Pb-free and Halide-free.

What is the on-resistance at 10V gate drive?

Typical 6.5mOhm, maximum 7.8mOhm at Vgs=-10V, Id=-14.5A.

What is the total gate charge?

124nC maximum at Vgs=10V.

Does the device have ESD protection?

Yes, typical HBM ESD protection level of 6.5kV.

Home
Account

Categories