| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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361,600 pcs
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361600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,500 pcs
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2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,310 pcs
|
2310 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | 1035 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDS6670AS is an N-Channel MOSFET produced by ON Semiconductor. It is designed for power management applications requiring efficient switching.
The device features a maximum drain-to-source voltage of 30V and a continuous drain current of 13.5A. The on-resistance is typically 9mOhm at 13.5A drain current and 10V gate drive. The gate threshold voltage is 3V maximum at 1mA drain current. Input capacitance is 1540pF at 15V and gate charge is 38nC at 10V.
The MOSFET is housed in an 8-SOIC surface-mount package with an operating junction temperature range of -55°C to 150°C. Maximum power dissipation is 2.5W at ambient temperature.
This device is suitable for applications requiring low voltage, high current switching with low conduction losses.
30V.
8-SOIC surface-mount package.
-55°C to 150°C junction temperature.
It is listed as RoHS3 compliant, but this has not been verified.
3V maximum at 1mA drain current.
9mOhm maximum at 13.5A drain current and 10V gate drive.
38nC at 10V gate-source voltage.