DistyParts Icon
FDS6670A N-Channel MOSFET rated for 30V drain-source voltage and 13A continuous drain current. Features low on-resistance of 8mOhm at 10V gate drive.
Mfr Part #:

FDS6670A

Available from 7 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET rated for 30V drain-source voltage and 13A continuous drain current. Features low on-resistance of 8mOhm at 10V gate drive.
✓ Total Stock: 17,332 pcs
$ Price Range: $0.35 - $1.30

FDS6670A Available from 7 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDS6670A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id
View Similar Products (0)

FDS6670A Description

Short technical summary and product information.

The FDS6670A is an N-Channel enhancement-mode MOSFET manufactured by ON Semiconductor. It is designed for a maximum drain-source voltage of 30V and can handle a continuous drain current of 13A at 25°C ambient temperature. The device features a low typical on-resistance of 8mOhm at a gate drive of 10V and 13A drain current.

 

This MOSFET utilizes advanced MOSFET technology to achieve low gate charge (30nC at 5V) and low input capacitance (2220pF at 15V), making it suitable for high-efficiency power management applications. The recommended gate drive voltages are 4.5V and 10V for minimum and maximum on-resistance respectively. The maximum gate-source voltage rating is ±20V.

 

The FDS6670A is housed in a standard 8-SOIC surface-mount package with gull wing leads. It is designed for surface mount assembly and is RoHS3 compliant. The operating junction temperature range is -55°C to 150°C, with a maximum power dissipation of 2.5W at 25°C ambient.

FDS6670A Quick Information

Product Type: MOSFET
Canonical Name: FDS6670A N-Channel MOSFET
Subcategory: N-Channel MOSFET

FDS6670A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDS6670A Estimated Pricing

Qty Low High
1+ $1.30 $1.30
10+ $0.82 $0.82
100+ $0.54 $0.54
500+ $0.42 $0.42
2,500+ $0.37 $0.37
5,000+ $0.36 $0.36
25,000+ $0.35 $0.35

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS6670A Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • Continuous drain current rating of 13A at 25°C.
  • Low on-resistance of 8mOhm at 10V gate drive.
  • Surface mount 8-SOIC package with gull wing leads.
  • RoHS3 compliant and REACH unaffected.

FDS6670A Applications

  • Power management in portable electronics.
  • DC-DC converter and load switch circuits.
  • Battery protection and charging circuits.
  • Low-voltage motor control applications.

FDS6670A FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDS6670A?

30V.

What is the continuous drain current rating?

13A at 25°C ambient temperature.

What is the on-resistance of this MOSFET?

8mOhm maximum at 13A drain current and 10V gate drive.

What package is the FDS6670A available in?

8-SOIC (0.154", 3.90mm Width) surface mount package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the FDS6670A RoHS compliant?

Yes, it is RoHS3 compliant.

What is the gate charge of the FDS6670A?

30nC maximum at 5V gate-source voltage.

Home
Account

Categories