| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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52,854 pcs
|
52854 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The FDS6612A-NB5E029A is an N-Channel MOSFET from On Semiconductor, designed for low-voltage switching applications. It features a maximum drain-source voltage of 30V and a continuous drain current of 8.4A at 25°C. The device offers a low on-resistance of 22mOhm at 8.4A and 10V gate drive.
This MOSFET utilizes MOSFET (Metal Oxide) technology and supports logic-level gate drive with a threshold voltage of 3V maximum at 250µA. The gate charge is 7.6nC at 5V, and input capacitance is 560pF at 15V, enabling efficient switching in power management circuits.
The device is housed in an 8-SOIC surface mount package with a width of 3.90mm, suitable for automated assembly. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 1W at 25°C ambient. The MOSFET is RoHS3 compliant and has an MSL rating of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 2,500+ | $0.27 | $0.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V
8-SOIC (0.154", 3.90mm Width)
-55°C to 150°C (junction)
Yes, RoHS3 compliant
8.4A at 25°C
22mOhm maximum at 8.4A and 10V gate drive