| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,919 pcs
|
4919 pcs | On Request | 1 | On Request | On Request | 430 | On Request | On Request | |
|
2,531 pcs
|
2531 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request | |
|
1,181 pcs
|
1181 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
190 pcs
|
190 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request | |
|
92 pcs
|
92 pcs | On Request | 1 | On Request | On Request | 08+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDS6612A is an N-Channel MOSFET designed for high efficiency switching applications. It features a maximum drain-source voltage of 30V and a continuous drain current of 8.4A at 25°C ambient. The device offers low on-resistance of 22mΩ typical at Vgs=10V and Id=8.4A, with a maximum of 22mΩ. At 4.5V gate drive, typical on-resistance is 24mΩ.
This MOSFET incorporates advanced trench technology to achieve low gate charge (7.6nC max at 5V) and fast switching speeds. Typical turn-on delay is 7ns and turn-off delay is 22ns. It also features a single pulse avalanche energy rating of 24mJ and a maximum junction temperature range of -55°C to 150°C.
Packaged in an industry-standard 8-SOIC (0.154", 3.90mm Width) surface mount package, the device is suitable for automated assembly. Thermal resistance from junction to ambient is 50°C/W (note 1a) and 125°C/W (note 1b). It is designed for applications requiring high power density and efficiency.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.65 | $0.65 |
| 10+ | $0.40 | $0.40 |
| 50+ | $0.29 | $0.29 |
| 100+ | $0.26 | $0.26 |
| 500+ | $0.19 | $0.19 |
| 3,000+ | $0.15 | $0.15 |
| 9,000+ | $0.13 | $0.13 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30V.
The continuous drain current is 8.4A at Ta=25°C.
Maximum on-resistance is 22mΩ at Vgs=10V, Id=8.4A, and 30mΩ at Vgs=4.5V, Id=7.2A. Typical values are 19mΩ and 24mΩ respectively.
The operating junction temperature range is -55°C to 150°C.
The device is offered in an 8-pin SOIC package (8-SOIC, 0.154" width, 3.90mm width).
RoHS3 compliant per database record, but this is unverified.
The maximum gate threshold voltage is 3V at Vds=Vgs, Id=250µA, with a typical value of 1.9V.