| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,700 pcs
|
4700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,958 pcs
|
2958 pcs | On Request | 1 | On Request | On Request | 03+ | On Request | On Request | |
|
1,468 pcs
|
1468 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
7 pcs
|
7 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDS6575 is a P-Channel enhancement-mode MOSFET from On Semiconductor, designed for power management and load switching applications. It features a maximum drain-source voltage of 20 V and a continuous drain current of 10 A. The device offers a low on-resistance of 13 mOhm (max) at Vgs=4.5V and Id=10A, enabling efficient power handling.
Key electrical characteristics include a gate threshold voltage of 1.5V (max at 250µA), gate charge of 74 nC at Vgs=4.5V, and input capacitance of 4951 pF at Vds=10V. The recommended drive voltage range is 2.5V to 4.5V for optimal Rds(on). Maximum power dissipation is 2.5 W at ambient temperature.
The device is housed in an industry-standard 8-SOIC (0.154", 3.90mm width) surface-mount package, with an operating junction temperature range from -55°C to +175°C. It is suitable for battery protection, DC-DC converters, and other low-voltage power switching circuits where a P-Channel MOSFET is required for high-side switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.53 | $1.53 |
| 10+ | $1.14 | $1.14 |
| 100+ | $0.91 | $0.91 |
| 500+ | $0.74 | $0.74 |
| 1,000+ | $0.66 | $0.66 |
| 2,500+ | $0.62 | $0.62 |
| 5,000+ | $0.59 | $0.59 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 20 V.
The maximum continuous drain current (Id) at 25°C Ta is 10 A.
The maximum drain-source on-resistance is 13 mOhm at Id=10A and Vgs=4.5V.
The junction temperature range is -55°C to +175°C.
The device comes in an 8-SOIC (0.154", 3.90mm width) surface-mount package.
The maximum gate threshold voltage (Vgs(th)) at Id=250µA is 1.5 V.
RoHS status is listed as RoHS3 Compliant, but this is unverified (low confidence).