| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,289 pcs
|
2289 pcs | On Request | 1 | On Request | On Request | 1105+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain Current, Pulsed | |
| Drain to Source Voltage (Vdss) | |
| Drain-Source Breakdown Voltage | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Fall Time (Typical/Maximum @ Vdd=-10 V, Id=-1 A, Vgs=-4.5 V, Rgen=6Ω) | |
| Forward Transconductance (Typ) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate-Drain Charge (Typ) | |
| Gate-Source Charge (Typ) | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Maximum Continuous Drain-Source Diode Forward Current | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Coss) (Typ) @ Vds | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Reel Size | |
| Reverse Transfer Capacitance (Crss) (Typ) @ Vds | |
| Rise Time (Typical/Maximum @ Vdd=-10 V, Id=-1 A, Vgs=-4.5 V, Rgen=6Ω) | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel Quantity | |
| Tape Width | |
| Technology | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance, Junction-to-Ambient (Note 1a) | |
| Turn-Off Delay Time (Typical/Maximum @ Vdd=-10 V, Id=-1 A, Vgs=-4.5 V, Rgen=6Ω) | |
| Turn-On Delay Time (Typical/Maximum @ Vdd=-10 V, Id=-1 A, Vgs=-4.5 V, Rgen=6Ω) | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Zero Gate Voltage Drain Current | |
| diode_forward_voltage (Typical/Maximum @ Is=2.1 A, Vgs=0 V) | |
| drain_source_on_resistance (Typical/Maximum @ Id=14 A, Vgs=2.5 V) | |
| drain_source_on_resistance (Typical/Maximum @ Id=16 A, Vgs=4.5 V) | |
| drain_source_on_resistance (Typical/Maximum @ Id=16 A, Vgs=4.5 V, Tj=125 °C) | |
| gate_body_leakage (Maximum @ VGS=±12 V, VDS=0 V) | |
| gate_threshold_voltage (Minimum/Typical/Maximum @ ID = 250 µA) | |
| power_dissipation (Maximum @ TA = 25 °C, Note 1 b) | |
| power_dissipation (Maximum @ Ta = 25 °C (Note 1 c) | |
| total_gate_charge (Typical/Maximum @ Vds=10 V, Id=16 A, Vgs=4.5 V) |
The FDS6572A is an N-Channel PowerTrench MOSFET designed for DC/DC converter applications using synchronous or conventional switching PWM controllers. It is rated for a maximum drain-to-source voltage of 20V and a continuous drain current of 16A at 25°C ambient temperature, with a pulsed drain current rating of 80A.
The device features a maximum on-resistance of 6mΩ at VGS=4.5V and 8mΩ at VGS=2.5V, enabling efficient low-voltage switching. Total gate charge is 57nC typical, and input capacitance is 5914pF at VDS=10V. The MOSFET is optimized for low gate charge, low RDS(ON), and fast switching speed.
The FDS6572A is available in an 8-SOIC surface-mount package with a junction-to-ambient thermal resistance of 50°C/W and a maximum power dissipation of 2.5W at 25°C ambient. It operates over a junction temperature range of -55°C to 175°C. The device is supplied in 13-inch tape and reel packaging with 2500 units per reel.
| Qty | Low | High |
|---|---|---|
| 142+ | $2.11 | $2.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (VDSS) is 20V.
The maximum continuous drain current is 16A at 25°C ambient temperature.
The maximum on-resistance is 6mΩ at VGS=4.5V and 8mΩ at VGS=2.5V.
The FDS6572A is available in an 8-SOIC surface mount package.
The operating junction temperature range is -55°C to 175°C.
The gate threshold voltage ranges from 0.6V minimum to 1.5V maximum, with a typical value of 0.8V at ID=250µA.
The total gate charge is 57nC typical and 80nC maximum at VDS=10V, ID=16A, VGS=4.5V.