| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,328 pcs
|
1328 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
| Tape & Reel | |
| Tape Width | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDS6162N7 is an N-Channel PowerTrench MOSFET from On Semiconductor (originally Fairchild Semiconductor) designed for high-efficiency DC/DC converters. It features a drain-source voltage rating of 20V and a continuous drain current of 23A at 25°C ambient. The device offers extremely low on-resistance: 3.5 mΩ typical at VGS=4.5V and 5.0 mΩ typical at VGS=2.5V, minimizing conduction losses.
Key electrical characteristics include a gate threshold voltage of 0.6V to 1.5V, input capacitance of 5521 pF typical, and total gate charge of 52 nC typical at VDS=10V. Fast switching is supported with turn-on delay of 20 ns and turn-off delay of 85 ns typical. The MOSFET is optimized for low-side synchronous rectification, making it suitable for high-current power conversion.
The device is housed in an FLMP SO-8 package (8-SOIC) with a bottom-side drain contact for enhanced thermal performance. Junction-to-ambient thermal resistance is 40°C/W, and junction-to-case is 0.5°C/W. The operating junction temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 131+ | $2.29 | $2.29 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20 V.
8-SOIC (FLMP SO-8) surface mount package.
-55°C to 150°C junction temperature.
Listed as RoHS3 compliant but this status is unverified from official sources.
23 A at Ta=25°C.
3.5 mΩ typical.
Synchronous rectifiers and DC/DC converters, especially low-side operation.