| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,120 pcs
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1120 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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The FDS6162N3 is a 20V N-Channel PowerTrench MOSFET from On Semiconductor designed to improve overall efficiency in DC/DC converters using synchronous or conventional PWM controllers. It is specifically optimized for low-side synchronous rectifier operation, offering extremely low on-resistance. Key electrical characteristics include a maximum drain-source voltage of 20V and continuous drain current of 21A (Ta=25°C). The device features a typical drain-source on-resistance of 3.3 mΩ at VGS=4.5V and 4.3 mΩ at VGS=2.5V, enabling high efficiency. Fast switching performance is supported with typical turn-on delay of 20ns and fall time of 55ns. The MOSFET is housed in a surface-mount 8-SOIC package (0.154", 3.90mm width) and is also available in an enhanced FLMP SO-8 package for improved thermal performance. Typical applications include synchronous rectifiers and DC/DC converters in power management systems.
| Qty | Low | High |
|---|---|---|
| 150+ | $2.00 | $2.00 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 20 V.
It is available in an 8-SOIC surface mount package (0.154", 3.90mm width). The datasheet also mentions an FLMP SO-8 package.
The operating junction temperature range is -55°C to 150°C.
According to existing data, it is RoHS3 Compliant, but this information is unverified.
The typical drain-source on-resistance is 3.3 mΩ at VGS=4.5V and ID=21A, with a maximum of 4.5 mΩ.
The gate threshold voltage is 0.6 V minimum, 0.9 V typical, and 1.5 V maximum at ID=250µA.