FDS6064N3 N-Channel MOSFET with 20V drain-source voltage and 23A continuous drain current. Features ultra-low 4.5mOhm on-resistance at 4.5V gate drive.
Mfr Part #:

FDS6064N3

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 20V drain-source voltage and 23A continuous drain current. Features ultra-low 4.5mOhm on-resistance at 4.5V gate drive.
✓ Total Stock: 228 pcs
$ Price Range: $2.00

FDS6064N3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
228 pcs
228 pcs On Request 1 On Request On Request On Request On Request On Request

FDS6064N3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDS6064N3 Description

Short technical summary and product information.

The FDS6064N3 is an N-Channel PowerTrench MOSFET from On Semiconductor designed for high-efficiency DC/DC converter applications. It delivers a drain-source voltage rating of 20V and a continuous drain current of 23A at ambient temperature, with a pulsed current capability of 60A.

 

This MOSFET achieves an ultra-low on-resistance of 4.5mOhm maximum at 4.5V gate drive and 23A drain current, making it well-suited for low-side synchronous rectifier operation. The device features a gate threshold voltage range of 0.4V to 1.5V and supports drive voltages of 1.8V and 4.5V.

 

The FDS6064N3 is housed in a surface-mount 8-SOIC package with enhanced thermal performance. It offers a maximum power dissipation of 3W at ambient temperature and an operating junction temperature range of -55°C to 150°C. The device is supplied in tape and reel packaging with 2500 units per reel.

FDS6064N3 Quick Information

Product Type: N-Channel MOSFET
Series: PowerTrench
Canonical Name: FDS6064N3 N-Channel PowerTrench MOSFET
Subcategory: Single N-Channel

FDS6064N3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDS6064N3 Estimated Pricing

Qty Low High
150+ $2.00 $2.00

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS6064N3 Features

  • N-Channel PowerTrench MOSFET design.
  • 20V drain-source voltage rating.
  • 23A continuous drain current capability.
  • Ultra-low 4.5mOhm on-resistance at 4.5V.
  • Surface-mount 8-SOIC package.

FDS6064N3 Applications

  • Low-side synchronous rectifier in DC/DC converters.
  • High-efficiency power management circuits.
  • Battery-powered portable electronics.

FDS6064N3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDS6064N3?

The drain-source voltage rating is 20V.

What is the continuous drain current of the FDS6064N3?

The continuous drain current is 23A at ambient temperature.

What is the on-resistance of the FDS6064N3?

The maximum on-resistance is 4.5mOhm at Vgs=4.5V and Id=23A.

What package does the FDS6064N3 come in?

The FDS6064N3 is housed in an 8-SOIC (0.154", 3.90mm Width) surface-mount package.

What is the operating temperature range of the FDS6064N3?

The operating junction temperature range is -55°C to 150°C.

Is the FDS6064N3 RoHS compliant?

The FDS6064N3 is listed as RoHS3 Compliant, though this information is unverified.

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