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FDS5690-NBBM009A N-Channel MOSFET with 60V drain-source voltage, 7A continuous drain current, and 28mOhm on-resistance, in a surface-mount 8-SOIC package.
Mfr Part #:

FDS5690-NBBM009A

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 60V drain-source voltage, 7A continuous drain current, and 28mOhm on-resistance, in a surface-mount 8-SOIC package.
✓ Total Stock: 1,992 pcs
$ Price Range: $0.42

FDS5690-NBBM009A Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
1,992 pcs
On Request
1992 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDS5690-NBBM009A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
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FDS5690-NBBM009A Description

Short technical summary and product information.

The FDS5690-NBBM009A is an N-Channel Power MOSFET from On Semiconductor, utilizing MOSFET (Metal Oxide) technology. It is designed for efficient switching and power management applications. Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 60V, a continuous drain current of 7A at Ta, and a maximum on-resistance (Rds on) of 28 mOhm at 7A and 10V gate drive. The gate charge is 32 nC at 10V, and input capacitance is 1107 pF at 30V. The threshold voltage is 4V at 250µA. The device is housed in a surface-mount 8-SOIC (8-lead Small Outline IC) package with a width of 3.90mm, suitable for automated assembly in compact designs. The MOSFET is RoHS3 compliant and has an MSL rating of 1 (unlimited) for moisture sensitivity. It is also REACH unaffected. This component is commonly used in power supply circuits, DC-DC converters, and load switching applications where efficient power control is required.

FDS5690-NBBM009A Quick Information

Product Type: N-Channel MOSFET
Series: FDS5690
Canonical Name: FDS5690-NBBM009A N-Channel MOSFET 60V 7A 8-SOIC
Subcategory: Single MOSFET

FDS5690-NBBM009A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDS5690-NBBM009A Estimated Pricing

Qty Low High
1,992+ $0.42 $0.42

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS5690-NBBM009A Features

  • N-Channel MOSFET with 60V drain-source voltage.
  • Continuous drain current rating of 7A.
  • Low on-resistance of 28 mOhm at 10V gate drive.
  • Surface-mount 8-SOIC package for compact design.
  • RoHS3 compliant with MSL level 1.

FDS5690-NBBM009A Applications

  • Used in power supply and DC-DC converter circuits.
  • Ideal for load switching and power management.
  • Suitable for motor control and automotive applications.
  • Common in battery-powered portable devices.

FDS5690-NBBM009A FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage (Vds)?

60V.

What is the continuous drain current rating?

7A at Ta.

What is the on-resistance (Rds on)?

28 mOhm maximum at Id=7A, Vgs=10V.

What is the package type?

8-SOIC (0.154", 3.90mm Width) surface-mount package.

Is this component RoHS compliant?

Yes, RoHS3 compliant.

What is the gate charge (Qg)?

32 nC at Vgs=10V.

What is the input capacitance (Ciss)?

1107 pF at Vds=30V.

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