| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,338 pcs
|
5338 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |
|
622 pcs
|
622 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDS5690 is an N-Channel enhancement-mode MOSFET designed and manufactured by On Semiconductor (now onsemi). It is rated for a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 7A at 25°C case temperature. The device features a maximum on-resistance (Rds(on)) of 28mOhm at a gate-source voltage of 10V and a drain current of 7A. The gate threshold voltage is maximum 4V at 250µA drain current.
The MOSFET exhibits a gate charge (Qg) of 32nC maximum at Vgs=10V, and an input capacitance (Ciss) of 1107pF maximum at Vds=30V. The device can be driven with gate voltages of 6V or 10V for optimized Rds(on) performance. Maximum gate-source voltage is ±20V. Power dissipation is limited to 2.5W at ambient temperature, and the operating junction temperature range is -55°C to 150°C.
The FDS5690 is offered in a surface-mount 8-SOIC package (0.154" width, 3.90mm width), also known as 8-SOIC. It is suitable for automated assembly and is commonly used in power management, DC-DC converters, load switching, and other low to medium power applications. The device is RoHS3 compliant, with MSL level 1 (unlimited) and REACH unaffected, though these compliance statuses are unverified from the source data.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.46 | $1.46 |
| 10+ | $0.93 | $0.93 |
| 100+ | $0.62 | $0.62 |
| 500+ | $0.48 | $0.48 |
| 1,000+ | $0.44 | $0.44 |
| 2,500+ | $0.41 | $0.41 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The FDS5690 has a maximum drain-source voltage (Vdss) of 60V.
The continuous drain current is rated at 7A at 25°C case temperature.
The maximum on-resistance is 28mOhm at a drain current of 7A and gate-source voltage of 10V.
The operating junction temperature range is -55°C to 150°C.
The FDS5690 is offered in an 8-SOIC surface-mount package (0.154", 3.90mm width).
The part is listed as RoHS3 Compliant, but this status is unverified and has low confidence.
The maximum gate threshold voltage is 4V at a drain current of 250µA.