FDS5680 FDS5680 is an N-Channel Power MOSFET from On Semiconductor, featuring a 60V drain-source voltage, 8A continuous drain current, and low on-resistance of 20mOhm at 10V gate drive. It is housed in a compact 8-SOIC package for surface mount applications.
Mfr Part #:

FDS5680

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDS5680 is an N-Channel Power MOSFET from On Semiconductor, featuring a 60V drain-source voltage, 8A continuous drain current, and low on-resistance of 20mOhm at 10V gate drive. It is housed in a compact 8-SOIC package for surface mount applications.
✓ Total Stock: 191,386 pcs
$ Price Range: $1.07

FDS5680 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

FDS5680 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDS5680 Description

Short technical summary and product information.

The FDS5680 is an N-Channel MOSFET produced using onsemi's advanced PowerTrench process, designed to minimize on-state resistance while maintaining superior switching performance. It features a drain-source voltage rating of 60V and a continuous drain current of 8A at ambient temperature. The device offers a maximum on-resistance of 20mOhm at 10V gate drive and 25mOhm at 6V, with a typical gate charge of 30nC for efficient switching. The input capacitance is typically 1850pF at 15V drain-source voltage. The gate threshold voltage is typically 2.5V with a maximum of 4V at 250µA. The device can handle a maximum power dissipation of 2.5W at ambient temperature. The junction-to-ambient thermal resistance is 50°C/W and junction-to-case is 25°C/W. The operating junction temperature range is -55°C to 150°C. The device is housed in an 8-SOIC package (0.154" width, 3.90mm) and is surface mountable. It is Pb-Free and Halide Free as per the datasheet. The FDS5680 is suitable for applications such as DC-DC converters, load switches, and motor drives.

FDS5680 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: FDS5680 N-Channel MOSFET, 60V, 8A, 8-SOIC
Subcategory: N-Channel MOSFET

FDS5680 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 - Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FDS5680 Estimated Pricing

Qty Low High
2,500+ $1.07 $1.07

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS5680 Features

  • 60V drain-source voltage rating.
  • 8A continuous drain current capability.
  • Low on-resistance: 20mOhm at 10V gate drive.
  • Low gate charge: 30nC typical.
  • Pb-Free and Halide Free compliant.

FDS5680 Applications

  • Ideal for DC-DC converter circuits.
  • Used in load switch applications.
  • Suitable for motor drive control.
  • Designed for low voltage power management.

FDS5680 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDS5680?

The drain-source voltage (Vdss) is 60V.

What is the continuous drain current?

The continuous drain current is 8A at ambient temperature.

What is the on-resistance of the FDS5680?

The maximum on-resistance is 20mOhm at 10V gate drive and 8A drain current, and 25mOhm at 6V gate drive.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package is the FDS5680 available in?

The device is available in an 8-SOIC (0.154" width, 3.90mm) surface mount package.

Is the FDS5680 RoHS compliant?

The device is marked as RoHS3 compliant (unverified) and datasheet confirms Pb-Free and Halide Free.

What is the typical gate charge?

The typical gate charge is 30nC.

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