FDS5351 FDS5351 is a 60V N-Channel MOSFET from On Semiconductor. It features a drain current of 6.1A and low on-resistance of 35mOhm at 10V gate drive.
Mfr Part #:

FDS5351

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDS5351 is a 60V N-Channel MOSFET from On Semiconductor. It features a drain current of 6.1A and low on-resistance of 35mOhm at 10V gate drive.
✓ Total Stock: 138 pcs

FDS5351 Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
132 pcs
132 pcs On Request 1 On Request On Request 12+ On Request On Request
Non-Authorised Inventory information
6 pcs
6 pcs On Request 1 On Request On Request P87AA On Request On Request

FDS5351 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDS5351 Description

Short technical summary and product information.

The FDS5351 is an N-Channel MOSFET manufactured by ON Semiconductor. It is designed for general purpose switching and power management applications. The device has a maximum drain-to-source voltage of 60V and a continuous drain current of 6.1A at ambient temperature. The on-resistance is typically 35mOhm at Vgs of 10V and Id of 6.1A, providing efficient conduction. The gate threshold voltage is 3V max at 250µA drain current, and the maximum gate-source voltage rating is ±20V. The device offers a total gate charge of 27nC at 10V, and an input capacitance of 1310pF at 30V drain-source voltage. The MOSFET is housed in a surface-mount 8-SOIC package (0.154", 3.90mm width), suitable for automated assembly. It operates over a junction temperature range of -55°C to 150°C, with a maximum power dissipation of 5W at ambient temperature. This RoHS3 compliant component is ideal for low-voltage power switching and DC-DC converter circuits.

FDS5351 Quick Information

Product Type: Single N-Channel MOSFET
Canonical Name: N-Channel MOSFET, 60V, 6.1A, 8-SOIC
Subcategory: Single N-Channel MOSFET

FDS5351 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: No

FDS5351 Features

  • N-Channel MOSFET for switching applications.
  • Drain-source voltage rating of 60V.
  • Continuous drain current of 6.1A.
  • Low on-resistance of 35 milliohms.
  • Surface mount package in 8-SOIC.

FDS5351 Applications

  • Used in power switching circuits.
  • Suitable for DC-DC converter designs.
  • Ideal for load switch applications.

FDS5351 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDS5351?

The maximum drain-source voltage is 60V.

What package is the FDS5351 available in?

It is available in a surface mount 8-SOIC package (0.154", 3.90mm width).

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the FDS5351 RoHS compliant?

According to the database record, it is RoHS3 compliant, but this is unverified. Please confirm with the manufacturer.

What is the maximum drain current?

The maximum continuous drain current is 6.1A at ambient temperature.

What is the on-resistance of the FDS5351?

The maximum on-resistance is 35 milliohms at Vgs=10V and Id=6.1A.

What is the gate charge of the device?

The maximum total gate charge is 27nC at Vgs=10V.

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