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FDS4935BZ FDS4935BZ is a dual P-Channel MOSFET from On Semiconductor. It features a 30V drain-source voltage, 6.9A continuous drain current, and 22mOhm on-resistance in an 8-SOIC package.
Mfr Part #:

FDS4935BZ

Available from 8 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDS4935BZ is a dual P-Channel MOSFET from On Semiconductor. It features a 30V drain-source voltage, 6.9A continuous drain current, and 22mOhm on-resistance in an 8-SOIC package.
✓ Total Stock: 127,859 pcs
$ Price Range: $0.31 - $1.57

FDS4935BZ Available from 8 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDS4935BZ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
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FDS4935BZ Description

Short technical summary and product information.

The FDS4935BZ is a dual P-Channel MOSFET (Metal Oxide) from On Semiconductor, configured as 2 P-Channel (Dual) in a compact 8-SOIC surface mount package. It is rated for a maximum drain-source voltage (Vdss) of 30 V and a continuous drain current of 6.9 A. The device features a low on-resistance of 22 mOhm maximum at Vgs=10V and Id=6.9A, making it suitable for efficient power switching. The gate charge is 40 nC maximum at Vgs=10V, and input capacitance is 1360 pF at Vds=15V, indicating moderate switching speeds. The gate threshold voltage is 3 V maximum at Id=250µA, classifying it as a logic level gate MOSFET. Maximum power dissipation is 900 mW. The operating temperature range is -55°C to 150°C (junction). The device is offered in an 8-SOIC (0.154", 3.90mm Width) package and is designed for surface mount assembly. It is suitable for load switching, power management, and other applications requiring dual P-Channel MOSFETs.

FDS4935BZ Quick Information

Product Type: MOSFET Array
Canonical Name: FDS4935BZ
Subcategory: P-Channel Dual MOSFET Array

FDS4935BZ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDS4935BZ Estimated Pricing

Qty Low High
1+ $1.57 $1.57
10+ $0.99 $0.99
50+ $0.74 $0.74
100+ $0.66 $0.66
500+ $0.51 $0.51
2,500+ $0.31 $0.31
5,000+ $0.39 $0.39

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS4935BZ Features

  • Dual P-Channel MOSFET in 8-SOIC package.
  • 30V drain-source voltage rating.
  • 6.9A continuous drain current capability.
  • 22mOhm on-resistance at 10V gate drive.
  • Logic level gate threshold for 3V drive.

FDS4935BZ Applications

  • Ideal for load switching in battery-powered devices.
  • Used in power management and DC-DC converters.
  • Suitable for motor control and solenoid drivers.
  • Works well in high-side switching applications.

FDS4935BZ FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDS4935BZ?

The maximum drain-source voltage (Vdss) is 30 V.

What package does the FDS4935BZ come in?

It is available in an 8-SOIC (0.154", 3.90mm Width) surface mount package.

What is the operating temperature range of the FDS4935BZ?

The operating temperature range is -55°C to 150°C (junction).

Is the FDS4935BZ RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this is unverified.

Is the FDS4935BZ a single or dual MOSFET?

It is a dual P-Channel MOSFET (2 P-Channel).

What is the gate threshold voltage of the FDS4935BZ?

The maximum gate threshold voltage (Vgs(th)) is 3 V at Id=250µA.

What is the on-resistance of the FDS4935BZ?

The maximum drain-source on-resistance is 22 mOhm at Vgs=10V, Id=6.9A.

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