| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,520 pcs
|
8520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,552 pcs
|
2552 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
7 pcs
|
7 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDS4935A is a dual P-Channel MOSFET manufactured by onsemi using advanced POWERTRENCH technology. It is designed for power management applications and offers a rugged gate capable of operating across a wide gate drive voltage range from 4.5V to 20V.
Electrical specifications include a maximum drain-source voltage of -30V, continuous drain current of -7A (pulsed up to -30A), and a maximum on-resistance of 23mΩ at VGS=-10V and ID=-7A. The device features low gate charge (15nC typical, 21nC maximum at VGS=5V) and fast switching speed, making it suitable for efficient power conversion.
The MOSFET is housed in a surface-mount 8-SOIC package with a body width of 3.90mm. It operates over a junction temperature range of -55°C to +150°C. The device is Pb-Free as stated in the datasheet and is indicated as RoHS3 Compliant.
Typical applications include power management, load switching, battery protection, and DC/DC converter designs where dual P-Channel switching is required. The logic level gate threshold allows direct drive from low-voltage logic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.68 | $1.68 |
| 10+ | $0.98 | $0.98 |
| 100+ | $0.70 | $0.70 |
| 2,500+ | $0.70 | $0.70 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is -30V.
It is offered in an 8-SOIC (0.154", 3.90mm Width) surface mount package.
The operating junction temperature range is -55°C to +150°C.
The device is indicated as RoHS3 Compliant in existing records (low confidence). The datasheet states it is Pb-Free.
The maximum continuous drain current (ID) is -7A at TA=25°C. Pulse current is -30A.
Typical Rds(on) is 19mΩ at VGS=-10V, ID=-7A (maximum 23mΩ). At VGS=-4.5V, ID=-5.5A, typical is 28mΩ (maximum 35mΩ).
The maximum gate charge (Qg) is 21nC at VGS=5V, with a typical value of 15nC.