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FDS4935 The FDS4935 is a dual P-Channel PowerTrench MOSFET from On Semiconductor. It features a 30V drain-source voltage rating, 7A continuous drain current, and low on-resistance of 23mOhm at 10V gate drive.
Mfr Part #:

FDS4935

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDS4935 is a dual P-Channel PowerTrench MOSFET from On Semiconductor. It features a 30V drain-source voltage rating, 7A continuous drain current, and low on-resistance of 23mOhm at 10V gate drive.
Total Stock: 2,500 pcs

FDS4935 Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request On Request On Request On Request

FDS4935 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain Current (Continuous)
Drain Current, Pulsed
Drain Source On Resistance (Typical/Maximum @ VGS = -4.5 V, ID = -5.5 A)
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Gate-Source Voltage (Max)
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Output Capacitance (Typical)
Power
Power Dissipation (Maximum @ Single operation (Note 1 A)
Rds On (Max) @ Id, Vgs
Reel Size
Reverse Transfer Capacitance (Typical)
Standard Package Quantity
Supplier Device Package
Tape & Reel
Tape Width
Technology
Vgs(th) (Max) @ Id

FDS4935 Description

Short technical summary and product information.

The FDS4935 is a dual P-Channel MOSFET manufactured by On Semiconductor using the advanced PowerTrench process. It integrates two independent P-Channel MOSFETs in a single 8-SOIC surface mount package. The device is rated for a maximum drain-source voltage of 30V and a continuous drain current of -7A at 25°C ambient. On-resistance is specified at 23 mOhm typical with a -10V gate drive and 35 mOhm with -4.5V drive, enabling logic-level gate operation. Gate threshold voltage ranges from -1V minimum to -3V maximum. The MOSFET features low gate charge (15 nC typical) and fast switching speeds, making it suitable for power management applications. The operating junction temperature range is -55°C to 175°C. Power dissipation is 1.6W for single operation and 2W for dual operation. The device is supplied in tape and reel packaging with 2500 units per reel.

FDS4935 Quick Information

Product Type: Dual P-Channel MOSFET
Series: PowerTrench
Canonical Name: FDS4935 Dual 30V P-Channel PowerTrench MOSFET
Subcategory: Dual P-Channel MOSFET

FDS4935 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDS4935 Features

  • Dual P-Channel MOSFET in SOIC-8 package.
  • 30V drain-source voltage rating.
  • 7A continuous drain current capability.
  • Low on-resistance of 23 milliohms.
  • Logic level gate for 4.5V drive.

FDS4935 Applications

  • Power management in portable devices.
  • Load switch for battery protection.
  • DC-DC converter applications.
  • High-side switching circuits.

FDS4935 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDS4935?

The maximum drain-source voltage (Vdss) is 30V.

What package is the FDS4935 available in?

The FDS4935 is available in an 8-SOIC (0.154", 3.90mm Width) surface mount package.

What is the operating temperature range of the FDS4935?

The operating junction temperature range is -55°C to 175°C.

Is the FDS4935 RoHS compliant?

The FDS4935 is listed as RoHS3 compliant, but this status is unverified and should be confirmed with the manufacturer.

What is the continuous drain current rating?

The maximum continuous drain current is -7A at TA=25°C.

What is the on-resistance at 10V gate drive?

The typical on-resistance is 23 mOhm at VGS = -10V and ID = -7A.

What is the gate threshold voltage range?

The gate threshold voltage ranges from -1V minimum to -3V maximum, with a typical value of -1.6V.

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