| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,543 pcs
|
1543 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
193 pcs
|
193 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain Current (Maximum @ P-Channel) | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDS4897C is a dual N and P-Channel MOSFET array from ON Semiconductor, designed for a variety of power management and switching applications. It integrates both an N-Channel and a P-Channel MOSFET in a single 8-SOIC package, offering a compact solution for circuits requiring complementary transistor pairs.
Key electrical specifications include a maximum drain-to-source voltage of 40V for both channels. The N-Channel MOSFET can handle a continuous drain current of 6.2A, while the P-Channel is rated at 4.4A. The device features a logic level gate, allowing it to be driven by low-voltage logic signals. Maximum on-resistance is 29 mΩ for the N-Channel at 6.2A and 10V gate drive. Gate charge is 20 nC at 10V, and input capacitance is 760 pF at 20V drain-source voltage.
The FDS4897C is housed in an industry-standard 8-SOIC surface mount package, making it suitable for automated assembly. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 900 mW. The device is RoHS3 compliant and has an MSL rating of 1 (unlimited), though these compliance statuses are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.83 | $1.83 |
| 10+ | $1.13 | $1.13 |
| 100+ | $0.74 | $0.74 |
| 500+ | $0.58 | $0.58 |
| 1,000+ | $0.50 | $0.50 |
| 2,500+ | $0.45 | $0.45 |
| 5,000+ | $0.40 | $0.40 |
| 10,000+ | $0.39 | $0.39 |
| 25,000+ | $0.37 | $0.37 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 40V for both N and P-Channel MOSFETs.
The FDS4897C is available in an 8-SOIC (0.154", 3.90mm Width) surface mount package.
The operating junction temperature range is -55°C to 150°C.
The FDS4897C is listed as RoHS3 Compliant, but this status is unverified and has low confidence.
The FDS4897C contains both an N-Channel and a P-Channel MOSFET.
The N-Channel can handle 6.2A and the P-Channel can handle 4.4A maximum continuous drain current.
The maximum gate charge is 20 nC at 10V gate-source voltage.