| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200,000 pcs
|
200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDS4897AC is a dual N and P-Channel MOSFET array manufactured by ON Semiconductor. It is designed for surface mount applications and comes in an 8-SOIC package. The device supports a maximum drain-to-source voltage of 40V and delivers continuous drain currents of 6.1A for the N-Channel and 5.2A for the P-Channel.
Key electrical characteristics include a maximum on-resistance of 26mOhm at 10V gate drive, a gate charge of 21nC, and an input capacitance of 1055pF. The gate threshold voltage is 3V maximum at 250µA drain current. The device is rated for a power dissipation of 900mW and operates over a junction temperature range of -55°C to 150°C.
The FDS4897AC features logic level gate drive capability, making it suitable for low-voltage switching applications. It is housed in an industry-standard 8-SOIC package with a 3.90mm body width, suitable for automated assembly processes.
The maximum drain-to-source voltage is 40V.
The N-Channel is rated for 6.1A continuous, and the P-Channel for 5.2A continuous.
The maximum on-resistance is 26mOhm at Vgs=10V and Id=6.1A.
The operating junction temperature range is -55°C to 150°C.
The FDS4897AC is available in an 8-SOIC surface mount package.
The FDS4897AC is listed as RoHS3 Compliant, though this is unverified.
The maximum gate charge is 21nC at Vgs=10V.