| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Tape Width | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel PowerTrench MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. The FDS4770 features a drain-source voltage rating of 40V, continuous drain current of 13.2A at Ta=25°C, and a typical on-resistance of 7.5mΩ at VGS=10V. Gate charge is 47nC typical, and input capacitance is 2819pF. The device is capable of handling 370mJ avalanche energy. It is offered in a surface-mount 8-SOIC package (0.154", 3.90mm width) with an operating junction temperature range of -55°C to 150°C. Power dissipation is 2.5W at Ta=25°C (note 1a). The part is RoHS3 compliant (unverified), MSL level 1, and REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 94+ | $3.20 | $3.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V maximum.
8-SOIC (0.154", 3.90mm Width) surface mount.
-55°C to 150°C (junction temperature).
RoHS3 compliant (unverified).
13.2A continuous at Ta=25°C.
2V minimum, 3.9V typical, 5V maximum at ID=250µA.
6mΩ min, 7.5mΩ typ, 10mΩ max at VGS=10V, ID=13.2A.