| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
49,383 pcs
|
49383 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
29,654 pcs
|
29654 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
13,381 pcs
|
13381 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
6,020 pcs
|
6020 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,400 pcs
|
4400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,873 pcs
|
1873 pcs | On Request | 1 | On Request | On Request | 1251 | On Request | On Request | |
|
14 pcs
|
14 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDS4685 is a P-Channel MOSFET manufactured by On Semiconductor. It features a maximum drain-to-source voltage (Vdss) of 40 V and a continuous drain current (Id) of 8.2 A at ambient temperature. The device has a low drain-source on-resistance of 27 mOhm at Id = 8.2 A with Vgs = 10 V. Drive voltage options are 4.5 V and 10 V for Rds(on) optimization.
The gate charge is 27 nC at Vgs = 5 V, and the input capacitance is 1872 pF at Vds = 20 V, providing reasonable switching performance for load-switching and power management applications. The maximum gate-source voltage is ±20 V, and the gate threshold voltage is 3 V at Id = 250 µA.
Power dissipation is rated at 2.5 W at ambient temperature, and the operating junction temperature range spans from -55°C to +150°C. The device is housed in an industry-standard 8-SOIC surface-mount package (0.154" width, 3.90 mm), making it suitable for compact PCB layouts.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.15 | $1.15 |
| 10+ | $0.70 | $0.70 |
| 100+ | $0.47 | $0.47 |
| 2,500+ | $0.47 | $0.47 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V.
8-SOIC surface-mount package (0.154", 3.90mm width).
-55°C to 150°C (junction temperature).
According to available data, it is marked as RoHS3 Compliant, but this information is unverified.
27 mOhm maximum at Id=8.2A and Vgs=10V.
27 nC maximum at Vgs=5V.
P-channel.