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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
175,000 pcs
|
175000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDS4675-F085 is a P-Channel enhancement-mode MOSFET from ON Semiconductor. It is designed for low-voltage power switching and load management applications. Key electrical specifications include a maximum drain-source voltage of 40V, continuous drain current of 11A at 25°C, and a maximum on-resistance of 13mOhm at Vgs=10V and Id=11A. The gate threshold voltage is 3V maximum at 250µA. Total gate charge is 56nC at Vgs=4.5V, and input capacitance is 4350pF at Vds=20V. The device is capable of dissipating up to 2.4W at ambient temperature. It operates over a junction temperature range of -55°C to 150°C. The MOSFET is housed in an 8-SOIC surface mount package with dimensions 0.154" x 3.90mm. Drive voltage range is 4.5V to 10V. Compliance information includes RoHS, REACH, and MSL Level 1 (all unverified).
| Qty | Low | High |
|---|---|---|
| 2,500+ | $0.84 | $0.84 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V.
11A at 25°C.
13mOhm at 11A, 10V.
-55°C to 150°C.
8-SOIC (0.154", 3.90mm Width).
RoHS status is listed as compliant but unverified.
3V max at 250µA.