FDS4675 P-Channel MOSFET with 40V drain-source voltage rating and 11A continuous drain current. Features low on-resistance of 13mOhm at 10V gate drive.
Mfr Part #:

FDS4675

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
P-Channel MOSFET with 40V drain-source voltage rating and 11A continuous drain current. Features low on-resistance of 13mOhm at 10V gate drive.
Total Stock: 202,764 pcs
$ Price Range: $0.80 - $1.94

FDS4675 Available from 4 distributors

Authorised
Non-Authorised

FDS4675 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDS4675 Description

Short technical summary and product information.

The FDS4675 is a P-Channel enhancement mode MOSFET manufactured by ON Semiconductor. It is designed for a maximum drain-to-source voltage of 40V and can handle a continuous drain current of 11A at an ambient temperature of 25°C. The device features a low drain-to-source on-resistance of 13 milliohms maximum when driven with a gate voltage of 10V at 11A drain current.

 

Electrical characteristics include a maximum gate threshold voltage of 3V at 250µA drain current, total gate charge of 56nC at Vgs=4.5V, and input capacitance of 4350pF at Vds=20V. The recommended drive voltages for achieving minimum and maximum on-resistance are 4.5V and 10V respectively, with an absolute maximum gate-source voltage of ±20V.

 

Thermally, the device can dissipate up to 2.4W at 25°C ambient and operates over a junction temperature range of -55°C to 175°C. It is supplied in a surface mount 8-SOIC package (8-lead small outline IC, 0.154 inch body width, 3.90mm width) suitable for automated assembly.

 

This P-Channel MOSFET is suited for load switching, battery protection, and power management applications where high efficiency and compact size are required.

FDS4675 Quick Information

Product Type: P-Channel MOSFET
Canonical Name: P-Channel MOSFET, 40V, 11A, 8-SOIC
Subcategory: Single MOSFET

FDS4675 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDS4675 Estimated Pricing

Qty Low High
1+ $1.94 $1.94
10+ $1.22 $1.22
100+ $0.80 $0.80
2,500+ $0.80 $0.80

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS4675 Features

  • P-Channel MOSFET with 40V drain-source voltage.
  • Continuous drain current rating of 11A.
  • Low on-resistance of 13 milliohms maximum.
  • Surface mount package in 8-SOIC.
  • Operating temperature range -55 to 175°C.

FDS4675 Applications

  • Ideal for load switching in portable devices.
  • Suitable for battery protection circuits.
  • Used in power management applications.
  • Applicable in DC-DC converter designs.

FDS4675 FAQs

4 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDS4675?

The maximum drain-source voltage (Vdss) is 40V.

What package is the FDS4675 available in?

The FDS4675 is available in an 8-SOIC surface mount package (0.154 inch, 3.90mm width).

What is the operating temperature range of the FDS4675?

The operating junction temperature range is -55°C to 175°C.

Is the FDS4675 RoHS compliant?

The FDS4675 is marked as RoHS3 compliant, but this status is unverified from official documentation.

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