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FDS4559-F085 Dual N and P-Channel enhancement mode MOSFET with 60V drain-source voltage rating. Supports 4.5A continuous drain current on N-channel and 3.5A on P-channel.
Mfr Part #:

FDS4559-F085

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
Dual N and P-Channel enhancement mode MOSFET with 60V drain-source voltage rating. Supports 4.5A continuous drain current on N-channel and 3.5A on P-channel.
Total Stock: 2,505 pcs
$ Price Range: $0.74 - $1.94

FDS4559-F085 Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,505 pcs
1505 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

FDS4559-F085 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Continuous Drain Current (Maximum @ P-Channel)
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

FDS4559-F085 Description

Short technical summary and product information.

The FDS4559-F085 is a dual N and P-Channel enhancement mode MOSFET array from On Semiconductor. With a maximum drain-to-source voltage of 60V, it provides continuous drain currents of 4.5A for the N-channel and 3.5A for the P-channel. The device features a low on-resistance of 55mΩ (max) at Vgs=10V and Id=4.5A, enabling efficient power switching. The logic-level gate ensures compatibility with low-voltage logic signals (threshold voltage max 3V). The input capacitance is 650pF (max) at Vds=25V, and the gate charge is 18nC (max) at Vgs=10V, supporting fast switching. The device can dissipate up to 2W and operates across a junction temperature range of -55°C to 150°C. It is housed in a standard 8-SOIC surface mount package (0.154", 3.90mm width), with a supplier device package of 8-SOIC. Environmental compliance includes RoHS3 (status unverified), REACH unaffected (unverified), and MSL Level 1 (unlimited). The part is cross-referenced under multiple DigiKey part numbers for different packaging options.

FDS4559-F085 Quick Information

Product Type: MOSFET Array
Series: F085
Canonical Name: MOSFET N/P-CH 60V 4.5A/3.5A 8-SOIC
Subcategory: N and P-Channel MOSFET

FDS4559-F085 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

FDS4559-F085 Estimated Pricing

Qty Low High
1+ $1.94 $1.94
200+ $0.77 $0.77
500+ $0.75 $0.75
1,000+ $0.74 $0.74

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS4559-F085 Features

  • Dual N and P-Channel MOSFETs in one package.
  • 60V maximum drain-to-source voltage rating.
  • Low on-resistance of 55mΩ at 10V gate drive.
  • Logic-level gate for 3.3V or 5V logic compatibility.
  • Surface mount 8-SOIC package for compact designs.

FDS4559-F085 Applications

  • Used in complementary push-pull output stages.
  • Suitable for load switching with logic-level control.

FDS4559-F085 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of FDS4559-F085?

60V.

What package is the FDS4559-F085 available in?

8-SOIC (0.154", 3.90mm Width) surface mount package.

What is the operating temperature range of the FDS4559-F085?

-55°C to 150°C (junction temperature).

Is the FDS4559-F085 RoHS compliant?

According to available data, it is listed as RoHS3 compliant, but this status is unverified.

What is the continuous drain current for the N-channel?

4.5A.

What is the continuous drain current for the P-channel?

3.5A.

Does the FDS4559-F085 support logic-level gate drive?

Yes, it features a logic-level gate, allowing direct drive from low-voltage logic signals.

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