| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,222 pcs
|
3222 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,960 pcs
|
1960 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
720 pcs
|
720 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
496 pcs
|
496 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request | |
|
7 pcs
|
7 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDS4559 is a complementary MOSFET pair integrating both N-Channel and P-Channel devices in a single 8-SOIC package. Manufactured using onsemi's advanced PowerTrench process, it is designed to minimize on-state resistance while maintaining low gate charge for superior switching performance.
The N-Channel MOSFET offers a maximum drain-source voltage of 60V and continuous drain current of 4.5A, with an RDS(on) of 55 mΩ at VGS = 10V and 75 mΩ at VGS = 4.5V. The P-Channel MOSFET provides -60V drain-source voltage and -3.5A continuous drain current, with RDS(on) of 105 mΩ at VGS = -10V and 135 mΩ at VGS = -4.5V.
This device is suitable for DC/DC converters, power management, and LCD backlight inverter applications. It is surface-mount packaged in an 8-SOIC (0.154", 3.90mm Width) and is Pb-Free and Halide Free compliant. The operating junction temperature range is -55°C to +175°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.80 | $1.80 |
| 10+ | $1.11 | $1.11 |
| 100+ | $0.73 | $0.73 |
| 2,500+ | $0.73 | $0.73 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The N-Channel MOSFET has a maximum drain-source voltage of 60V, and the P-Channel MOSFET has a maximum of -60V.
The N-Channel MOSFET can handle 4.5A continuous drain current, and the P-Channel MOSFET can handle -3.5A continuous drain current at TA = 25°C.
The operating junction temperature range is -55°C to +175°C.
The FDS4559 is available in an 8-SOIC (0.154", 3.90mm Width) surface mount package.
The FDS4559 is listed as RoHS3 compliant and is Pb-Free and Halide Free per the datasheet.
The N-Channel MOSFET has a maximum RDS(on) of 55 mΩ at VGS = 10V and 75 mΩ at VGS = 4.5V.
The maximum total gate charge is 18 nC at VGS = 10V.