| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,500 pcs
|
7500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,196 pcs
|
3196 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
311 pcs
|
311 pcs | On Request | 1 | On Request | On Request | 01+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDS4501H is a dual N and P-Channel MOSFET array manufactured by ON Semiconductor. This device integrates both an N-channel and a P-channel MOSFET in a single 8-SOIC surface-mount package, enabling compact power management and load switching designs.
The N-channel MOSFET is rated for 30V drain-source voltage and 9.3A continuous drain current, with a maximum on-resistance of 18mOhm at 10V gate drive. The P-channel MOSFET is rated for 20V drain-source voltage and 5.6A continuous drain current. Both channels feature logic-level gate thresholds, allowing direct drive from low-voltage logic circuits.
Key electrical characteristics include a maximum input capacitance of 1958pF and a maximum total gate charge of 27nC at 4.5V, supporting efficient switching in moderate-frequency applications. The device is housed in an 8-SOIC package with a 3.90mm body width and is rated for operation from -55°C to 150°C junction temperature.
The FDS4501H is suitable for applications requiring complementary N and P-channel MOSFETs in a single package, such as DC-DC converters, motor drivers, and power management circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.91 | $1.91 |
| 10+ | $1.22 | $1.22 |
| 100+ | $0.82 | $0.82 |
| 500+ | $0.64 | $0.64 |
| 1,000+ | $0.59 | $0.59 |
| 2,500+ | $0.53 | $0.53 |
| 10,000+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The FDS4501H is housed in an 8-SOIC surface mount package with a 3.90mm body width.
The N-channel MOSFET is rated for 30V drain-source voltage and 9.3A continuous drain current.
The P-channel MOSFET is rated for 20V drain-source voltage and 5.6A continuous drain current.
The device operates over a junction temperature range of -55°C to 150°C.
The FDS4501H is listed as RoHS3 Compliant, though this status is unverified.
The maximum on-resistance is 18mOhm at a drain current of 9.3A and gate-source voltage of 10V.
Yes, the device features logic-level gate drive with a maximum gate threshold voltage of 3V at 250µA.