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FDS4488 FDS4488 is an N-Channel MOSFET from ON Semiconductor with 30V drain-to-source voltage and 7.9A continuous drain current.
Mfr Part #:

FDS4488

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDS4488 is an N-Channel MOSFET from ON Semiconductor with 30V drain-to-source voltage and 7.9A continuous drain current.
✓ Total Stock: 30 pcs
$ Price Range: $0.31 - $1.34

FDS4488 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Speed Components Ltd ✓
Non-Authorised Inventory information
30 pcs
On Request
30 pcs On Request 1 On Request On Request PG7EK On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDS4488 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDS4488 Description

Short technical summary and product information.

The FDS4488 is an N-Channel MOSFET from ON Semiconductor designed for low-voltage power switching applications. It features a maximum drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 7.9A at ambient temperature. The device offers a low on-resistance of 22 mOhm maximum at Vgs=10V and Id=7.9A, enabling efficient power handling.

 

The MOSFET is housed in an 8-SOIC surface mount package (0.154", 3.90mm width) and supports a wide operating junction temperature range from -55°C to 175°C. The maximum power dissipation is 1W at ambient temperature. Input capacitance is 927 pF at Vds=15V, and gate charge is 13 nC at Vgs=5V, making it suitable for moderate-speed switching applications.

FDS4488 Quick Information

Product Type: MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor)
Canonical Name: FDS4488 N-Channel MOSFET
Subcategory: N-Channel MOSFET

FDS4488 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDS4488 Estimated Pricing

Qty Low High
1+ $1.34 $1.34
10+ $0.84 $0.84
100+ $0.56 $0.56
500+ $0.50 $0.50
1,000+ $0.43 $0.43
2,500+ $0.39 $0.39
5,000+ $0.35 $0.35
10,000+ $0.33 $0.33
25,000+ $0.31 $0.31

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS4488 Features

  • N-Channel MOSFET with 30V drain-to-source voltage.
  • Continuous drain current of 7.9 amperes at ambient.
  • Low on-resistance of 22 milliohms at 10V gate drive.
  • Surface mount in 8-SOIC package (3.90mm width).
  • RoHS3 compliant for environmental standards.

FDS4488 Applications

  • Load switch for low voltage circuits
  • DC-DC converter in portable devices
  • Power management for battery applications
  • Motor drive in small appliances

FDS4488 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of FDS4488?

The maximum drain-to-source voltage (Vdss) is 30V.

What is the package type of FDS4488?

The device is offered in an 8-SOIC (0.154", 3.90mm Width) surface mount package.

What is the operating temperature range of FDS4488?

The operating junction temperature range is -55°C to 175°C.

Is FDS4488 RoHS compliant?

Yes, it is listed as RoHS3 Compliant (unverified status).

What is the continuous drain current of FDS4488?

The continuous drain current is 7.9A at ambient temperature (Ta).

What is the on-resistance of FDS4488 at 10V gate drive?

The maximum on-resistance is 22 mOhm at Id=7.9A and Vgs=10V.

What is the maximum power dissipation of FDS4488?

The maximum power dissipation is 1W at ambient temperature (Ta).

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