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FDS4480 This is a N-Channel power MOSFET from On Semiconductor with a 40V drain-source breakdown voltage, continuous drain current of 10.8A, and low 12mOhm on-resistance at 10V gate drive. Housed in a surface-mount 8-SOIC package.
Mfr Part #:

FDS4480

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
This is a N-Channel power MOSFET from On Semiconductor with a 40V drain-source breakdown voltage, continuous drain current of 10.8A, and low 12mOhm on-resistance at 10V gate drive. Housed in a surface-mount 8-SOIC package.
✓ Total Stock: 5,000 pcs

FDS4480 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
5,000 pcs
On Request
5000 pcs On Request 1 On Request On Request 18+ On Request On Request
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FDS4480 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDS4480 Description

Short technical summary and product information.

The FDS4480 from On Semiconductor is a N-Channel enhancement-mode power MOSFET built with MOSFET (Metal Oxide) technology. It features a maximum drain-source voltage (Vdss) of 40 V and can handle a continuous drain current of 10.8 A (at Ta). The device offers a very low on-resistance of only 12 mOhm, measured at 10 V gate drive and 10.8 A drain current, making it highly efficient for power switching applications.

 

Gate charge is specified at 41 nC maximum at 10 V gate-source voltage, and input capacitance is 1686 pF typical at 20 V drain-source bias. The threshold voltage is a maximum of 5 V at 250 µA drain current. The maximum gate-source voltage range is +30 V to -20 V.

 

The device is specified for operation over a wide junction temperature range from -55°C to +175°C, with a maximum power dissipation of 2.5 W at ambient temperature. It comes in a standard surface-mount 8-SOIC package with a 0.154-inch body width (3.90 mm).

FDS4480 Quick Information

Product Type: Power MOSFET
Series: FDS4480
Canonical Name: FDS4480 N-Channel Power MOSFET
Subcategory: Single MOSFETs

FDS4480 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDS4480 Features

  • N-Channel MOSFET with 40V drain-source rating.
  • Continuous drain current of 10.8A (ambient).
  • Low on-resistance: 12mOhm at 10V gate drive.
  • Surface-mount 8-SOIC package for compact design.
  • Operating junction temperature range -55°C to +175°C.

FDS4480 Applications

  • Power switching and load management circuits.
  • DC-DC converters and power supplies.
  • Motor drive and solenoid control.
  • Battery protection and management systems.

FDS4480 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vdss) of the FDS4480?

The maximum drain-source breakdown voltage is 40 V.

What is the continuous drain current rating of this MOSFET?

The continuous drain current (Id) is 10.8 A at ambient temperature (Ta).

What is the on-resistance (Rds(on)) of the FDS4480?

The maximum on-resistance is 12 mOhm at a drain current of 10.8 A and a gate-source voltage of 10 V.

What is the operating temperature range for the FDS4480?

The device operates over a junction temperature range from -55°C to 175°C.

What package does the FDS4480 use?

The FDS4480 is offered in a surface-mount 8-SOIC package (0.154 inch width, 3.90 mm).

What is the maximum gate charge of the FDS4480?

The maximum gate charge (Qg) is 41 nC at a gate-source voltage of 10 V.

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