| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,180 pcs
|
2180 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,730 pcs
|
1730 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
848 pcs
|
848 pcs | On Request | 1 | On Request | On Request | 430 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDS4470 is an N-Channel enhancement-mode MOSFET manufactured by ON Semiconductor. It is designed for high-efficiency power management applications requiring a 40V drain-source voltage rating and a continuous drain current of 12.5A at ambient temperature.
Key electrical characteristics include a maximum drain-source on-resistance of 9 milliohms at Vgs=10V and Id=12.5A, a maximum gate charge of 63nC at Vgs=10V, and an input capacitance of 2659pF at Vds=20V. The device operates over a junction temperature range of -55°C to +175°C and can dissipate up to 2.5W at ambient temperature.
The FDS4470 is housed in a standard 8-SOIC (0.154", 3.90mm Width) surface-mount package, making it suitable for automated assembly processes. This MOSFET is commonly used in DC-DC converters, load switches, and power management circuits where low conduction losses and high switching performance are required.
| Qty | Low | High |
|---|---|---|
| 1,730+ | $0.58 | $0.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 40V.
The continuous drain current is 12.5A at ambient temperature.
The maximum on-resistance is 9 milliohms at Vgs=10V and Id=12.5A.
The operating junction temperature range is -55°C to +175°C.
The FDS4470 is available in an 8-SOIC (0.154", 3.90mm Width) surface-mount package.
The maximum power dissipation is 2.5W at ambient temperature.
The maximum gate charge is 63nC at Vgs=10V.