| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,655 pcs
|
3655 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,571 pcs
|
3571 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDS4465-G is a P-Channel MOSFET from ON Semiconductor, fabricated using the advanced POWERTRENCH process. It is designed for power management applications requiring low gate drive voltages from 1.8V to 8V.
Key electrical specifications include a drain-source voltage rating of 20V, continuous drain current of 13.5A at 25°C (50A pulsed), and a maximum on-resistance of 8.5mΩ at VGS = -4.5V. The device also features low on-resistance at lower gate drives: 10.5mΩ at -2.5V and 14mΩ at -1.8V. Gate charge is 120nC at 4.5V, and input capacitance is 8237pF at 10V.
The MOSFET is housed in a standard 8-SOIC surface mount package (0.154" width, 3.90mm) and operates over a junction temperature range of -55°C to 175°C. It is suitable for load switch, battery protection, and general power management circuits where low RDS(on) and fast switching are required.
| Qty | Low | High |
|---|---|---|
| 2,000+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 20V.
It is available in an 8-SOIC surface mount package (0.154", 3.90mm width).
The operating junction temperature range is -55°C to 175°C.
The part is listed as RoHS3 compliant, but this status is unverified.
The gate threshold voltage (Vgs(th)) ranges from 0.4V (minimum) to 1.5V (maximum), with a typical value of 0.6V at ID = 250µA.
The maximum on-resistance is 8.5mΩ at VGS = -4.5V and ID = -13.5A. At VGS = -2.5V it is 10.5mΩ, and at VGS = -1.8V it is 14mΩ.
The continuous drain current is 13.5A at TA = 25°C, with a pulsed current rating of 50A.