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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
90,400 pcs
|
90400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
21,599 pcs
|
21599 pcs | On Request | 1 | On Request | On Request | 0947+ | On Request | On Request | |
|
3,520 pcs
|
3520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,108 pcs
|
3108 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,420 pcs
|
1420 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
145 pcs
|
145 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
94 pcs
|
94 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5 pcs
|
5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain Current, Pulsed | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Power Dissipation (Maximum @ Note 1 c) | |
| Rds On (Max) @ Id, Vgs | |
| Static Drain-Source On-Resistance (Typical/Maximum @ VGS = -1.8 V, ID = -10.5 A) | |
| Static Drain-Source On-Resistance (Typical/Maximum @ VGS = -2.5 V, ID = -12 A) | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Thermal Resistance, Junction to Ambient (Nominal @ Note 1 A) | |
| Thermal Resistance, Junction-to-Ambient (Nominal @ Note 1 c) | |
| Thermal Resistance, Junction-to-Case (Note 1) | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| power-dissipation (Maximum @ Note 1 b) |
The FDS4465 is a P-Channel MOSFET designed using On Semiconductor's advanced POWERTRENCH process. It is specified for operation with gate drive voltages from 1.8V to 8V, making it suitable for a wide range of power management applications. Key electrical specifications include a drain-source voltage rating of -20V, a continuous drain current of -13.5A at Ta=25°C (Note 1a), and a pulsed drain current of -50A. The device offers low on-resistance: 8.5mΩ typical at VGS=-4.5V, 10.5mΩ at VGS=-2.5V, and 14mΩ at VGS=-1.8V. The gate threshold voltage ranges from -0.4V to -1.5V. The device has a maximum power dissipation of 2.5W (Note 1a) and an operating junction temperature range of -55°C to 175°C. It is packaged in an 8-SOIC (0.154", 3.90mm Width) surface mount package with gull wing terminals. The MOSFET is commonly used in load switch, battery protection, and power management circuits due to its fast switching speed and high current handling capability.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.21 | $2.21 |
| 10+ | $1.41 | $1.41 |
| 100+ | $0.95 | $0.95 |
| 500+ | $0.76 | $0.76 |
| 2,500+ | $0.76 | $0.76 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The FDS4465 is rated for a drain-source voltage of -20V (P-Channel, negative polarity).
The FDS4465 is available in an 8-SOIC (0.154", 3.90mm Width) surface mount package.
The operating junction temperature range is -55°C to 175°C.
The FDS4465 is listed as RoHS3 compliant, but this status is unverified and should be confirmed with official documentation.
The continuous drain current is -13.5A at Ta=25°C (Note 1a).
The gate threshold voltage ranges from -0.4V (typical) to -1.5V (maximum) at VDS=VGS, ID=250µA.
The typical on-resistance is 6.7mΩ at VGS=-4.5V, ID=-13.5A, with a maximum of 8.5mΩ. At VGS=-2.5V, typical is 8.0mΩ, max 10.5mΩ. At VGS=-1.8V, typical is 9.8mΩ, max 14mΩ.