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FDS4435BZ FDS4435BZ is a P-Channel MOSFET from On Semiconductor with 30V drain-source voltage, 8.8A continuous drain current, and 20mOhm on-resistance. It comes in an 8-SOIC surface mount package.
Mfr Part #:

FDS4435BZ

Available from 7 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDS4435BZ is a P-Channel MOSFET from On Semiconductor with 30V drain-source voltage, 8.8A continuous drain current, and 20mOhm on-resistance. It comes in an 8-SOIC surface mount package.
✓ Total Stock: 211,987 pcs
$ Price Range: $0.48 - $1.16

FDS4435BZ Available from 7 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDS4435BZ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDS4435BZ Description

Short technical summary and product information.

The FDS4435BZ is a P-Channel enhancement mode MOSFET manufactured by On Semiconductor. It features a drain-source breakdown voltage of 30V and a continuous drain current of 8.8A at ambient temperature. The device has a maximum on-resistance of 20mOhm at 8.8A and 10V gate drive, making it suitable for low-voltage power management applications.

 

The MOSFET utilizes MOSFET (Metal Oxide) technology and offers a gate threshold voltage of up to 3V at 250µA. It has a maximum gate charge of 40nC at 10V and input capacitance of 1845pF at 15V drain-source voltage. The device can dissipate up to 2.5W at ambient temperature and operates over a junction temperature range of -55°C to 150°C.

 

The FDS4435BZ is supplied in an 8-SOIC surface mount package (0.154", 3.90mm width) with a supplier device package of 8-SOIC. It is designed for surface mount assembly and is RoHS3 compliant (unverified). The part is commonly used in load switching, battery protection, and DC-DC converter applications.

FDS4435BZ Quick Information

Product Type: Single P-Channel MOSFET
Canonical Name: FDS4435BZ
Subcategory: P-Channel

FDS4435BZ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDS4435BZ Estimated Pricing

Qty Low High
1+ $1.16 $1.16
10+ $0.68 $0.68
100+ $0.48 $0.48
2,500+ $0.48 $0.48

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS4435BZ Features

  • P-Channel MOSFET with 30V drain-source voltage.
  • Continuous drain current of 8.8A.
  • Low on-resistance of 20mOhm.
  • Surface mount 8-SOIC package.
  • Wide operating temperature range -55°C to 150°C.

FDS4435BZ Applications

  • Used in load switching applications.
  • Suitable for battery protection circuits.
  • Ideal for DC-DC converter designs.
  • Power management in portable electronics.

FDS4435BZ FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the FDS4435BZ?

The drain-source breakdown voltage is 30V.

What package is the FDS4435BZ available in?

It comes in an 8-SOIC (0.154", 3.90mm Width) surface mount package.

What is the operating temperature range?

The junction temperature range is -55°C to 150°C.

Is the FDS4435BZ RoHS compliant?

It is listed as RoHS3 Compliant, but this status is unverified.

What is the drain current rating?

The maximum continuous drain current is 8.8A at ambient temperature.

What is the on-resistance?

The maximum on-resistance is 20mOhm at 8.8A and 10V gate drive.

What is the gate threshold voltage?

The maximum gate threshold voltage is 3V at 250µA drain current.

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