FDS4435A P-Channel PowerTrench MOSFET rated for 30V drain-source voltage and 9A continuous drain current. Features low on-resistance of 17mΩ at 10V gate drive.
Mfr Part #:

FDS4435A

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
P-Channel PowerTrench MOSFET rated for 30V drain-source voltage and 9A continuous drain current. Features low on-resistance of 17mΩ at 10V gate drive.
✓ Total Stock: 18 pcs
$ Price Range: $1.91

FDS4435A Available from 1 distributor

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✓ Non-Authorised
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FDS4435A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Tape Width
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDS4435A Description

Short technical summary and product information.

The FDS4435A is a P-Channel Logic Level PowerTrench MOSFET from On Semiconductor, designed for high-performance power management applications. It offers a drain-source voltage (Vdss) of 30V and a continuous drain current of 9A, with pulsed current capability up to 50A.

 

Key electrical characteristics include a maximum on-resistance (Rds(on)) of 17mΩ at Vgs = 10V and Id = 9A, and 25mΩ at Vgs = 4.5V. The gate threshold voltage (Vgs(th)) is 2V maximum at Id = 250µA. Input capacitance (Ciss) is 2010pF typical at Vds = 15V, and total gate charge (Qg) is 30nC at Vgs = 5V.

 

The device is housed in an 8-SOIC (0.154", 3.90mm Width) surface-mount package, suitable for automated assembly. It supports an operating junction temperature range of -55°C to +150°C, with a maximum power dissipation of 2.5W at 25°C ambient (note 1a).

 

Typical applications include load switching, power management in portable devices, and DC-DC converter circuits where low on-resistance and high efficiency are required.

FDS4435A Quick Information

Product Type: P-Channel MOSFET
Series: FDS4435A
Canonical Name: FDS4435A P-Channel PowerTrench MOSFET, 30V, 9A, 8-SOIC
Subcategory: Single MOSFET

FDS4435A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDS4435A Estimated Pricing

Qty Low High
157+ $1.91 $1.91

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS4435A Features

  • P-Channel PowerTrench MOSFET for efficient switching.
  • 30V drain-source voltage with 9A continuous current.
  • Low on-resistance of 17mΩ at 10V gate drive.
  • Logic-level gate threshold voltage of 2V maximum.
  • Surface-mount 8-SOIC package for automated assembly.

FDS4435A Applications

  • Ideal for load switching in portable devices.
  • Used in DC-DC converter power management circuits.
  • Suitable for battery protection and charging circuits.
  • Applicable in power distribution and switching systems.

FDS4435A FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDS4435A?

The maximum drain-source voltage (Vdss) is 30V.

What is the continuous drain current rating?

The continuous drain current is 9A at 25°C ambient (Note 1a).

What is the on-resistance of the FDS4435A?

The maximum on-resistance (Rds(on)) is 17mΩ at Vgs = 10V and Id = 9A.

What package does the FDS4435A come in?

The FDS4435A is available in an 8-SOIC (0.154", 3.90mm Width) surface-mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

Is the FDS4435A RoHS compliant?

The FDS4435A is listed as RoHS3 Compliant (unverified).

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