FDS4435 The FDS4435 is a -30V, -8.8A P-Channel PowerTrench MOSFET in an 8-SOIC package. It features low on-resistance of 20mΩ at VGS=-10V and fast switching.
Mfr Part #:

FDS4435

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDS4435 is a -30V, -8.8A P-Channel PowerTrench MOSFET in an 8-SOIC package. It features low on-resistance of 20mΩ at VGS=-10V and fast switching.
✓ Total Stock: 3,509 pcs

FDS4435 Available from 5 distributors

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FDS4435 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

FDS4435 Description

Short technical summary and product information.

The FDS4435 is a P-Channel enhancement-mode MOSFET fabricated with Fairchild Semiconductor's advanced PowerTrench process. It is designed for power management applications requiring a wide gate drive voltage range from 4.5V to 25V.

 

Key electrical specifications include a maximum drain-source voltage of -30V, continuous drain current of -8.8A at 25°C ambient, and pulsed drain current capability up to -50A. The static drain-source on-resistance is typically 20mΩ at VGS=-10V and 35mΩ at VGS=-4.5V. The device offers low gate charge of 17nC typical and fast switching speeds with typical turn-on delay of 13ns and turn-off delay of 42ns.

 

The MOSFET is housed in a surface-mount 8-SOIC package with gull wing leads and is supplied in tape and reel packaging with 2500 units per reel. It is suitable for load switching, power management, and battery protection circuits.

FDS4435 Quick Information

Product Type: P-Channel MOSFET
Series: PowerTrench
Canonical Name: FDS4435 P-Channel PowerTrench MOSFET
Subcategory: Single MOSFETs

FDS4435 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

FDS4435 Features

  • P-Channel PowerTrench MOSFET technology.
  • Maximum drain-source voltage of -30V.
  • Continuous drain current of -8.8A at 25°C.
  • Low on-resistance of 20mΩ at VGS=-10V.
  • Surface-mount 8-SOIC package.

FDS4435 Applications

  • Ideal for power management applications.
  • Used in load switch circuits.
  • Suitable for battery protection systems.

FDS4435 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDS4435?

The maximum drain-source voltage (Vdss) is -30V.

What is the continuous drain current rating of the FDS4435?

The continuous drain current is -8.8A at Ta=25°C.

What is the typical on-resistance of the FDS4435?

The typical RDS(on) is 20mΩ at VGS=-10V and Id=-8.8A, and 35mΩ at VGS=-4.5V and Id=-6.7A.

What is the operating temperature range of the FDS4435?

The operating junction temperature range is -55°C to 175°C.

What package is the FDS4435 available in?

The FDS4435 is available in an 8-SOIC (0.154", 3.90mm Width) surface-mount package.

What is the gate threshold voltage of the FDS4435?

The gate threshold voltage (Vgs(th)) ranges from -1V minimum to -3V maximum, with a typical value of -1.7V at Vds=Vgs and Id=-250µA.

What is the total gate charge of the FDS4435?

The total gate charge (Qg) is typically 17nC and maximum 24nC at Vds=-15V, Id=-8.8A, and Vgs=-5V.

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