| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | 1904+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDS4410A is a single N-Channel MOSFET manufactured by ON Semiconductor. It uses MOSFET (Metal Oxide) technology and is designed for surface-mount applications. The device provides a maximum drain-to-source voltage of 30 V and a drain current rating of 10 A at ambient temperature.
Key electrical characteristics include a drain-source on-state resistance of 13.5 mΩ (maximum) at a gate-source drive of 10 V, and a maximum gate-source threshold voltage of 3 V at 250 µA. The input capacitance is 1205 pF (maximum) at 15 V drain-source voltage, and the maximum gate charge is 16 nC at 5 V gate-source voltage.
The FDS4410A operates over a junction temperature range of -55°C to 150°C. It is housed in an 8-SOIC package (0.154", 3.90mm width) with surface-mount mounting, suitable for space-constrained PCB designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.35 | $0.35 |
| 5+ | $0.17 | $0.17 |
| 50+ | $0.17 | $0.17 |
| 150+ | $0.17 | $0.17 |
| 500+ | $0.17 | $0.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 V.
10 A (Ta).
13.5 mΩ maximum at 10A, 10V.
3 V maximum at 250 µA drain current.
-55°C to 150°C (TJ).
8-SOIC (0.154", 3.90mm width), surface mount.
RoHS3 compliant.