| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15,000 pcs
|
15000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDS4410 is a single N-Channel Logic Level MOSFET from ON Semiconductor, designed for PWM DC/DC converter applications. It utilizes PowerTrench technology to achieve fast switching and low gate charge, improving overall converter efficiency. Key electrical specifications include a maximum drain-source voltage of 30V, continuous drain current of 10A, and pulsed drain current of 50A. The on-resistance is typically 13.5mΩ at VGS=10V and ID=10A, and 20mΩ at VGS=4.5V and ID=9A. Gate threshold voltage is 3V maximum at ID=250µA. The device features low input capacitance (1340pF at VDS=15V) and typical gate charge of 22nC. It is housed in an 8-SOIC surface mount package, suitable for automated assembly. Operating junction temperature range is -55°C to 150°C. The MOSFET is optimized for use with PWM controllers in synchronous or conventional switching power supplies.
| Qty | Low | High |
|---|---|---|
| 568+ | $0.53 | $0.53 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V
10A
13.5mΩ maximum at ID=10A
3V maximum at ID=250µA
-55°C to 150°C
8-SOIC
22nC