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FDS3890 ON Semiconductor FDS3890 is a dual N-channel PowerTrench MOSFET rated at 80V drain-source voltage and 4.7A continuous drain current. It comes in an 8-SOIC surface mount package.
Mfr Part #:

FDS3890

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
ON Semiconductor FDS3890 is a dual N-channel PowerTrench MOSFET rated at 80V drain-source voltage and 4.7A continuous drain current. It comes in an 8-SOIC surface mount package.
✓ Total Stock: 37,881 pcs
$ Price Range: $1.33 - $3.00

FDS3890 Available from 4 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDS3890 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Power Dissipation
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
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FDS3890 Description

Short technical summary and product information.

The FDS3890 from ON Semiconductor is a dual N-channel PowerTrench MOSFET designed for high-efficiency DC-DC converters. It features a maximum drain-source voltage of 80V and a continuous drain current of 4.7A. The on-resistance is 44mΩ at 10V gate voltage and 50mΩ at 6V, making it suitable for both synchronous and conventional switching controllers. The device is logic level gate compatible with a maximum gate threshold voltage of 4V. It offers fast switching speed with low gate charge (35nC) and input capacitance (1180pF). The MOSFET is housed in an 8-SOIC surface mount package with a junction temperature range of -55°C to 175°C. Power dissipation is 2W for dual operation and 0.9W for single operation. The device is Pb-Free and Halide Free as declared in the datasheet.

FDS3890 Quick Information

Product Type: Dual N-Channel MOSFET
Canonical Name: ON Semiconductor FDS3890 Dual N-Channel PowerTrench MOSFET 80V 4.7A SOIC-8
Subcategory: Arrays

FDS3890 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDS3890 Estimated Pricing

Qty Low High
1+ $3.00 $3.00
10+ $1.94 $1.94
100+ $1.33 $1.33
2,500+ $1.33 $1.33

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS3890 Features

  • Dual N-channel PowerTrench MOSFET technology.
  • Rated for 80V drain-source voltage.
  • 44mΩ on-resistance at 10V Vgs.
  • Logic level gate for easy drive.
  • Surface mount 8-SOIC package.

FDS3890 Applications

  • Used in DC-DC converter circuits.
  • Suitable for synchronous rectification.
  • Ideal for power management systems.
  • Applicable in portable devices.

FDS3890 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

80 V

What is the package type?

8-SOIC (0.154", 3.90mm Width) surface mount

What is the operating temperature range?

-55°C to 175°C (junction)

Is the FDS3890 RoHS compliant?

RoHS3 Compliant (unverified)

What is the continuous drain current?

4.7 A

What is the on-resistance at 10V gate voltage?

44 mΩ

What is the gate threshold voltage?

Maximum 4 V at Id=250µA

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