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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
44,939 pcs
|
44939 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,568 pcs
|
2568 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain Source On Resistance (Typical @ VGS=6 V) | |
| Drain to Source Voltage (Vdss) | |
| Drain-Source On-Resistance (Typical @ Vgs=10 V) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate Charge (Typical) | |
| Gate Threshold Voltage (Minimum/Maximum @ Vds = Vgs, Id = 250 µA) | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Maximum Drain-Source Avalanche Current | |
| Mounting Type | |
| Number of Pins | |
| Operating Temperature | |
| Package Description | |
| Packaging Type | |
| Power Dissipation (Max) | |
| Power Dissipation (Maximum @ TA = 25 °C, Note 1 b) | |
| Power Dissipation (Maximum @ Ta = 25 °C (Note 1 c) | |
| Pulsed Drain Current | |
| Rds On (Max) @ Id, Vgs | |
| Single Pulse Drain-Source Avalanche Energy | |
| Standard Package Quantity | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDS3580 is an N-Channel MOSFET manufactured by On Semiconductor, designed for DC-DC converter applications. It utilizes PowerTrench technology to achieve low on-resistance and efficient switching. The device is rated for a drain-source voltage of 80V and a continuous drain current of 7.6A at 25°C, with a pulsed current capability of 50A.
The on-resistance is typically 29 mΩ at Vgs=10V and 33 mΩ at Vgs=6V, with a maximum of 29 mΩ at 7.6A and 10V. Gate threshold voltage ranges from 2V to 4V (at Id=250µA). Low gate charge (34 nC typical) and fast switching speed make it suitable for high-frequency switching power supplies. Input capacitance is 1800 pF maximum at Vds=25V.
Thermal characteristics include a power dissipation of 2.5W at 25°C ambient (Note 1a), junction temperature range of -55°C to 150°C, and thermal resistance junction-to-ambient of 50°C/W. The MOSFET is packaged in a surface-mount 8-SOIC (SOIC8, Case 751EB) and supplied in tape and reel with 2500 pieces per reel. The device is avalanche rated (245 mJ single pulse).
The FDS3580 is Pb-Free and Halide Free. Compliance information indicates RoHS3 compliant (unverified), MSL level 1, and REACH unaffected. It is well suited for synchronous buck converters, load switching, and other power management applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.31 | $2.31 |
| 10+ | $1.48 | $1.48 |
| 100+ | $1.01 | $1.01 |
| 500+ | $0.80 | $0.80 |
| 1,000+ | $0.73 | $0.73 |
| 2,500+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
80V
7.6A at Ta=25°C
29 mΩ at Vgs=10V, 33 mΩ at Vgs=6V
8-SOIC (SOIC8, Case 751EB)
-55°C to 150°C (junction)
The datasheet states Pb-Free and Halide Free; database indicates RoHS3 Compliant (unverified).
34 nC