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FDS3572 N-Channel MOSFET with 80V drain-source voltage and 8.9A continuous drain current. Features 16mOhm on-resistance at 10V gate drive, 41nC gate charge, and 1990pF input capacitance.
Mfr Part #:

FDS3572

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 80V drain-source voltage and 8.9A continuous drain current. Features 16mOhm on-resistance at 10V gate drive, 41nC gate charge, and 1990pF input capacitance.
✓ Total Stock: 2,800 pcs
$ Price Range: $1.17 - $2.65

FDS3572 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
2,500 pcs
On Request
2500 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
300 pcs
On Request
300 pcs On Request 1 On Request On Request 09+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDS3572 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDS3572 Description

Short technical summary and product information.

The FDS3572 is an N-Channel MOSFET from On Semiconductor designed for medium-voltage power switching applications. With a drain-source voltage rating of 80V and continuous drain current of 8.9A, this device is suitable for a variety of power management and conversion circuits.

 

The MOSFET features a low on-resistance of 16mOhm maximum at 10V gate drive, minimizing conduction losses. The total gate charge is 41nC at 10V, enabling efficient switching in moderate-frequency applications. Input capacitance is 1990pF at 25V Vds, providing predictable switching behavior.

 

Packaged in an 8-SOIC surface-mount package, the FDS3572 is designed for compact PCB layouts. It operates over a junction temperature range of -55°C to 150°C. Recommended gate drive voltages are 6V (minimum for acceptable Rds(on)) and 10V (for full enhancement). Maximum power dissipation is 2.5W at 25°C ambient.

FDS3572 Quick Information

Product Type: MOSFET
Canonical Name: FDS3572 N-Channel MOSFET
Subcategory: N-Channel MOSFET

FDS3572 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDS3572 Estimated Pricing

Qty Low High
1+ $2.65 $2.65
10+ $1.71 $1.71
100+ $1.17 $1.17
2,500+ $1.17 $1.17

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS3572 Features

  • N-Channel MOSFET with 80V drain-source voltage.
  • Continuous drain current rating of 8.9A at 25°C.
  • Low on-resistance: 16mOhm maximum at 10V gate drive.
  • Total gate charge of 41nC at 10V gate voltage.
  • Surface-mount 8-SOIC package for compact designs.

FDS3572 Applications

  • Power management and DC-DC conversion applications.
  • Load switching and motor control circuits.
  • Suitable for battery protection circuits.
  • Used in synchronous rectification designs.

FDS3572 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDS3572?

80V.

What is the continuous drain current rating?

8.9A at 25°C ambient.

What is the maximum on-resistance?

16mOhm at 8.9A, 10V gate drive.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What package is the FDS3572 available in?

8-SOIC (0.154", 3.90mm Width) surface mount.

Is the FDS3572 RoHS compliant?

Yes, RoHS3 compliant.

What is the total gate charge?

41nC maximum at 10V gate voltage.

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