| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,073 pcs
|
1073 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDS3170N7 is a 100V N-Channel PowerTrench MOSFET manufactured by On Semiconductor. It is designed for use in DC/DC converters and synchronous rectifier circuits, offering low on-resistance and fast switching. The device is rated for a maximum drain-source voltage of 100V and a continuous drain current of 6.7A at 25°C ambient, with a pulsed drain current rating of 60A.
The MOSFET features a typical RDS(on) of 26mΩ at VGS=10V, with a maximum of 28mΩ, and a gate threshold voltage ranging from 2V to 4V. Total gate charge is 55nC typical (77nC maximum), contributing to efficient high-frequency switching. Thermal characteristics include a maximum power dissipation of 3W at 25°C ambient and a junction-to-ambient thermal resistance of 40°C/W.
The FDS3170N7 is offered in an 8-SOIC surface-mount package with a supplier device package of 8-SO, suitable for automated assembly. It is available in tape-and-reel packaging with 2500 units per reel. The operating junction temperature range is -55°C to +150°C. The part is listed as RoHS3 compliant.
The maximum drain-source voltage (Vdss) is 100 V.
It is available in an 8-SOIC (0.154", 3.90mm Width) surface-mount package, with supplier device package 8-SO.
The operating junction temperature range is -55°C to +150°C.
The part is listed as RoHS3 compliant.
Maximum continuous drain current is 6.7 A at 25°C ambient.
Typical RDS(on) is 26 mΩ at VGS=10V, with a maximum of 28 mΩ.
Total gate charge is 55 nC typical and 77 nC maximum at VGS=10V, VDS=50V.