Mfr Part #:

FDS2672

N-Channel MOSFET from On Semiconductor with 200V maximum drain-source voltage and 3.9A drain current. Features low on-resistance of 70mOhm at 10V gate drive.

✓ Total Stock: 6,500 pcs

$ Price Range: $1.38 - $3.08

FDS2672 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	4,000 pcs On Request	4000 pcs	On Request	1	On Request	On Request	22+	On Request	On Request
PROSOFT ELECTRONICS ✓ Non-Authorised Inventory information	2,500 pcs On Request	2500 pcs	On Request	1	On Request	On Request	24+	On Request	On Request

FDS2672 Description

Short technical summary and product information.

The FDS2672 is an N-Channel Power MOSFET manufactured by On Semiconductor. It is designed for switching applications requiring a drain-source voltage rating of 200V and a continuous drain current of 3.9A at ambient temperature.

This MOSFET utilizes advanced MOSFET (Metal Oxide) technology to achieve a low drain-to-source on-resistance of 70mOhm maximum at 3.9A drain current and 10V gate drive. The gate charge is 46nC at 10V, and input capacitance is 2535pF at 100V drain-source voltage, making it suitable for moderate-frequency switching applications.

The device is surface mount packaged in an 8-SOIC (0.154", 3.90mm width) case, allowing for compact PCB designs. It supports a maximum power dissipation of 2.5W at ambient temperature and operates over a junction temperature range of -55°C to 150°C. The gate threshold voltage is 4V maximum at 250µA drain current, and the maximum gate-source voltage rating is ±20V.

FDS2672 Quick Information

Product Type: N-Channel MOSFET

Canonical Name: FDS2672 N-Channel MOSFET 200V 3.9A 8SOIC

Subcategory: Single N-Channel MOSFET

FDS2672 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

FDS2672 Estimated Pricing

Qty	Low	High
1+	$3.08	$3.08
10+	$2.00	$2.00
100+	$1.38	$1.38
2,500+	$1.38	$1.38

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS2672 Features

N-Channel MOSFET with 200V drain-source voltage.
Maximum drain current of 3.9A at ambient temperature.
Low on-resistance of 70mOhm at 10V gate drive.
Surface mount package in 8-SOIC (3.90mm width).
Operating temperature range from -55°C to 150°C.

FDS2672 Applications

Used in DC-DC converter circuits.
Suitable for power management applications.
Ideal for motor drive control.
Common in load switching designs.

FDS2672 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage rating?

200V

What is the package type?

8-SOIC (0.154", 3.90mm width)

What is the operating temperature range?

-55°C to 150°C (junction temperature)

Is the FDS2672 RoHS compliant?

Yes, RoHS3 compliant (unverified).

What is the maximum drain current?

3.9A at ambient temperature.

What is the typical on-resistance?

70mOhm maximum at 3.9A and 10V gate drive.

What is the gate charge?

46nC at 10V gate voltage.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	3.9 A (Ta)
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2535 pF @ 100 V
Mounting Type	Surface Mount
Operating Temperature	-55°C to 150°C (TJ)
Power Dissipation (Max)	2.5 W (Ta)
Rds On (Max) @ Id, Vgs	70 mOhm @ 3.9 A, 10 V
SVHC Present	Not Present
Supplier Device Package	8-SOIC
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	4 V @ 250 µA