| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,219 pcs
|
5219 pcs | On Request | 1 | On Request | On Request | 1015+ | On Request | On Request | |
|
3,200 pcs
|
3200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,555 pcs
|
1555 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDS2670 from On Semiconductor is an N-Channel MOSFET designed for various electronic applications. It offers a maximum drain-to-source voltage (Vdss) of 200V and can handle a continuous current of 3A. The Rds On is specified at a maximum of 130 mOhm at 3A and 10V gate-source voltage.
This MOSFET utilizes Metal Oxide Semiconductor technology and has a gate charge (Qg) of 43 nC maximum at 10V. Input capacitance (Ciss) is 1228 pF maximum at 100V. The gate threshold voltage (Vgs(th)) is 4.5V maximum at 250µA, and the maximum gate-source voltage is ±20V.
With a maximum power dissipation of 2.5W and an operating temperature range of -55°C to 150°C, the FDS2670 is suitable for demanding environments. It is packaged in an 8-SOIC surface mount configuration, with a standard width of 3.90mm.
Key electrical parameters include a drive voltage of 10V for optimal Rds On performance. The device is RoHS3 compliant and has an MSL rating of 1.
The maximum drain-to-source voltage (Vdss) is 200 V.
The continuous current rating is 3 A.
The maximum Rds On is 130 mOhm at 3A and 10V.
The maximum gate charge (Qg) is 43 nC at 10V.
The maximum input capacitance (Ciss) is 1228 pF at 100V.
The maximum gate threshold voltage (Vgs(th)) is 4.5 V at 250µA.
The maximum gate-source voltage (Vgs) is ±20 V.
The maximum power dissipation is 2.5 W.
The operating temperature range is -55°C to 150°C.
The FDS2670 is available in an 8-SOIC package for surface mounting.
The FDS2670 is RoHS3 compliant.