| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
95,158 pcs
|
95158 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,520 pcs
|
3520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,846 pcs
|
1846 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
185 pcs
|
185 pcs | On Request | 1 | On Request | On Request | 1215+ | On Request | On Request | |
|
60 pcs
|
60 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
29 pcs
|
29 pcs | On Request | 1 | On Request | On Request | HAUAD | On Request | On Request | |
|
10 pcs
|
10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDS2582 is an N-Channel MOSFET from On Semiconductor's POWERTRENCH series. It is designed for high-efficiency power conversion applications. This device features a maximum drain-source voltage of 150V and continuous drain current of 4.1A at 25°C. The typical on-resistance is 57mΩ at 10V gate drive, with a maximum of 66mΩ. The gate threshold voltage ranges from 2V to 4V. The maximum gate charge is 25nC, and input capacitance is 1290pF. It is capable of single pulse avalanche energy of 252mJ. The operating junction temperature range is -55°C to 150°C. The device is housed in an 8-SOIC package with surface mount mounting. It is Pb-Free and Halide free, compliant with RoHS. Applications include DC/DC converters, off-line UPS, distributed power architectures, and 24V/48V systems. The device is suitable for primary switch and synchronous rectifier functions.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.18 | $2.18 |
| 10+ | $1.39 | $1.39 |
| 100+ | $0.94 | $0.94 |
| 500+ | $0.76 | $0.76 |
| 2,500+ | $0.76 | $0.76 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 150V.
The device is available in an 8-SOIC (0.154", 3.90mm width) surface mount package.
The operating junction temperature range is -55°C to 150°C.
Yes, the device is RoHS3 compliant and Pb-Free.
The typical on-resistance is 57mΩ and maximum is 66mΩ at Vgs=10V and Id=4.1A.
The typical gate charge is 19nC and maximum is 25nC at Vgs=10V.
The single pulse avalanche energy is 252mJ at 25°C.