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FDS2170N7 The FDS2170N7 is a 200V, 3A N-Channel PowerTrench MOSFET from On Semiconductor, designed for DC/DC converter applications. It features a low on-resistance of 213 mΩ max and fast switching.
Mfr Part #:

FDS2170N7

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDS2170N7 is a 200V, 3A N-Channel PowerTrench MOSFET from On Semiconductor, designed for DC/DC converter applications. It features a low on-resistance of 213 mΩ max and fast switching.
✓ Total Stock: 1,557 pcs
$ Price Range: $2.49

FDS2170N7 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
1,557 pcs
On Request
1557 pcs On Request 1 On Request On Request 0919+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDS2170N7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Tape Width
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDS2170N7 Description

Short technical summary and product information.

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for 'low side' synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Key specifications include a 200V drain-source voltage rating, 3A continuous drain current, and a maximum on-resistance of 213 mΩ at VGS=10V. The device features a typical gate charge of 26 nC for fast switching, with turn-on delay of 12 ns, rise time of 5 ns, turn-off delay of 30 ns, and fall time of 23 ns. It is rated for avalanche energy of 400 mJ. The FDS2170N7 is housed in an 8-SOIC surface mount package and is available in tape and reel packaging with 2500 units per reel. Operating junction temperature range is -55°C to 150°C. Applications include synchronous rectifiers and DC/DC converters.

FDS2170N7 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: FDS2170N7 N-Channel MOSFET
Subcategory: Single N-Channel MOSFET

FDS2170N7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDS2170N7 Estimated Pricing

Qty Low High
121+ $2.49 $2.49

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS2170N7 Features

  • 200V drain-source voltage rating.
  • 3A continuous drain current capability.
  • Low on-resistance of 213 mΩ max.
  • Fast switching with 26 nC typical gate charge.
  • Surface mount 8-SOIC package.

FDS2170N7 Applications

  • Designed for synchronous rectifier circuits.
  • Ideal for DC/DC converter applications.
  • Used in low-side switching designs.

FDS2170N7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDS2170N7?

200 V.

What is the continuous drain current?

3 A at Ta=25°C.

What is the on-resistance (RDS(on))?

Typical 107 mΩ, maximum 213 mΩ at VGS=10V, ID=3A, 25°C.

What is the package type?

8-SOIC (0.154", 3.90mm Width) surface mount.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the FDS2170N7 RoHS compliant?

It is marked as RoHS3 compliant, but this is unverified. Please verify with manufacturer.

What is the typical gate charge?

26 nC typical, 36 nC maximum at VGS=10V.

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