Mfr Part #:

FDS2170N3

The FDS2170N3 is a 200V, 3A N-Channel PowerTrench MOSFET from On Semiconductor. It features low RDS(on) of 128 mΩ and fast switching, packaged in an 8-SOIC.

✓ Total Stock: 4,020 pcs

$ Price Range: $2.36

FDS2170N3 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	4,020 pcs On Request	4020 pcs	On Request	1	On Request	On Request	08+	On Request	On Request

FDS2170N3 Description

Short technical summary and product information.

The FDS2170N3 is an N-Channel PowerTrench MOSFET designed for high-efficiency DC/DC converters. It is rated for a maximum drain-source voltage of 200V and continuous drain current of 3A at 25°C. The device achieves a low on-resistance of 128 mΩ (maximum) at VGS = 10V, with typical gate charge of 26 nC for fast switching performance. It is optimized for low-side synchronous rectifier operation, improving overall converter efficiency.

The MOSFET is housed in an industry-standard 8-SOIC surface mount package with enhanced thermal performance via a bottom-side drain contact. It operates over a junction temperature range of -55°C to 150°C. Thermal resistance is 40°C/W junction-to-ambient (Note 1a) and 0.5°C/W junction-to-case. Power dissipation is rated at 3W (Note 1a) and 1.8W (Note 1b) depending on mounting conditions.

Typical applications include synchronous rectifiers, DC/DC converters, and switching PWM controllers. The device is available in tape and reel packaging with 2500 units per reel.

FDS2170N3 Quick Information

Product Type: N-Channel MOSFET

Series: FDS2170N3

Canonical Name: N-Channel PowerTrench MOSFET, 200V, 3A, 8-SOIC

Subcategory: N-Channel MOSFET

FDS2170N3 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

FDS2170N3 Estimated Pricing

Qty	Low	High
127+	$2.36	$2.36

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS2170N3 Features

200V drain-source voltage rating.
3A continuous drain current capability.
Low 128 mΩ on-resistance at 10V.
Fast switching with 26 nC gate charge.
Surface mount 8-SOIC package.

FDS2170N3 Applications

Ideal for low-side synchronous rectifiers.
Used in DC/DC converter designs.
Suitable for high-efficiency power supplies.
Optimized for switching PWM controllers.

FDS2170N3 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage?

200 V

What is the continuous drain current?

3 A at TA = 25°C

What is the typical on-resistance?

108 mΩ typical, 128 mΩ maximum at VGS = 10 V, ID = 3 A

What is the typical gate charge?

26 nC typical, 36 nC maximum at VGS = 10 V

What is the operating temperature range?

-55°C to 150°C

What package is the device available in?

8-SOIC (0.154", 3.90mm Width) surface mount package

Is the device RoHS compliant?

Yes, RoHS3 Compliant (unverified)

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
AEC Qualified	No
Automotive Grade	No
Current	3 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	26 nC (typ), 36 nC (max)
Halogen Free	No
Industrial Grade	No
Input Capacitance (Ciss) (Max) @ Vds	1292 pF
Medical Grade	No
Military Grade	No
Mounting Type	Surface Mount
Operating Temperature	-55°C to 150°C
Power Dissipation (Max)	3 W
Rds On (Max) @ Id, Vgs	108 mΩ (typ) / 128 mΩ (max)
SVHC Present	Not Present
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	2 V (min), 4 V (typ), 4.5 V (max)