Mfr Part #:

FDR858P

P-Channel Logic Level PowerTrench MOSFET rated for -30V drain-source voltage and -8A continuous drain current. Features low on-resistance of 19mΩ at -10V gate drive.

✓ Total Stock: 15,480 pcs

$ Price Range: $0.42 - $0.46

FDR858P Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Braun Electronic Components ✓ Non-Authorised Inventory information	11,880 pcs On Request	11880 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Components Technology Group, Inc. ✓ Non-Authorised Inventory information	3,600 pcs On Request	3600 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FDR858P Description

Short technical summary and product information.

The FDR858P is a single P-Channel Logic Level PowerTrench MOSFET from On Semiconductor, designed for low-voltage power management and load switching applications. It is rated for a maximum drain-source voltage of -30V and a continuous drain current of -8A at 25°C ambient.

Key electrical characteristics include a maximum drain-source on-resistance of 19mΩ at Vgs = -10V and Id = -8A, and 28mΩ at Vgs = -4.5V and Id = -6.3A. The device features low gate charge (21nC typical) and fast switching speeds with typical turn-on delay of 12ns and turn-off delay of 100ns.

The MOSFET is housed in a SuperSOT-8 surface-mount package (8-LSOP, 3.30mm width), offering a small footprint and low profile (1mm thick) suitable for space-constrained designs. Maximum power dissipation is 1.8W at 25°C ambient (junction-to-ambient thermal resistance 70°C/W).

FDR858P Quick Information

Product Type: MOSFET

Series: PowerTrench

Canonical Name: FDR858P P-Channel Logic Level PowerTrench MOSFET

Subcategory: Logic Level PowerTrench MOSFET

FDR858P Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 (Unlimited)

REACH Status: REACH Unaffected

FDR858P Estimated Pricing

Qty	Low	High
3,000+	$0.46	$0.46
6,000+	$0.43	$0.43
9,000+	$0.42	$0.42

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDR858P Features

P-Channel MOSFET rated for -30V drain-source.
Continuous drain current of -8A at 25°C.
Low on-resistance of 19mΩ at -10V gate drive.
SuperSOT-8 surface-mount package, 1mm profile.
Logic level gate drive compatible with 4.5V.

FDR858P Applications

Load switching in notebook computers.
Battery charging circuits for portable devices.
DC/DC conversion power management.
Power management in space-constrained designs.

FDR858P FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage of the FDR858P?

The maximum drain-source voltage (Vdss) is -30V.

What is the continuous drain current rating?

The continuous drain current is -8A at 25°C ambient.

What is the on-resistance at -10V gate drive?

The maximum on-resistance is 19mΩ at Vgs = -10V and Id = -8A.

What package is the FDR858P available in?

It is available in a SuperSOT-8 surface-mount package (8-LSOP, 3.30mm width).

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the FDR858P RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this is unverified and should be confirmed with official documentation.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
AEC Qualified	No
Automotive Grade	No
Current	8 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	2010 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C to 150°C
Power Dissipation (Max)	1.8 W
Rds On (Max) @ Id, Vgs	19mOhm @ 8A, 10V
Storage Temperature	-55°C ~ 150°C
Supplier Device Package	SuperSOT-8
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	-1 V (min), -1.7 V (typ), -3 V (max)