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FDR8508P FDR8508P is a small signal dual P-Channel MOSFET from On Semiconductor. It features 30V drain-source voltage, 3A continuous current, and low on-resistance of 52mΩ at 10V gate drive.
Mfr Part #:

FDR8508P

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDR8508P is a small signal dual P-Channel MOSFET from On Semiconductor. It features 30V drain-source voltage, 3A continuous current, and low on-resistance of 52mΩ at 10V gate drive.
Total Stock: 4,140 pcs
$ Price Range: $1.70

FDR8508P Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,200 pcs
3200 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
940 pcs
940 pcs On Request 1 On Request On Request On Request On Request On Request

FDR8508P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain Source On Resistance (Maximum @ Id = 3 A, Vgs = 4.5 V)
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Gate Charge (Typical)
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

FDR8508P Description

Short technical summary and product information.

The FDR8508P is a dual P-Channel MOSFET manufactured by On Semiconductor using advanced PowerTrench technology. It is designed for small signal switching applications requiring low gate charge and low on-resistance. The device features a drain-source voltage rating of 30V and continuous drain current of 3A. On-resistance is specified at 52mΩ maximum at Vgs=10V and Id=3A, and 86mΩ at Vgs=-4.5V. Gate threshold voltage is 3V maximum at Id=250µA. The MOSFET has a logic level gate feature, allowing direct drive from low voltage logic. Input capacitance is 750pF typical at Vds=15V. The device is housed in an 8-LSOP (SuperSOT-8) surface mount package, suitable for compact designs. Operating temperature range is -55°C to 150°C. Typical applications include load switching, DC/DC converters, and motor driving. The dual configuration saves board space in applications requiring two P-Channel MOSFETs.

FDR8508P Quick Information

Product Type: MOSFET Array
Series: FDR8508P
Canonical Name: FDR8508P Dual P-Channel MOSFET
Subcategory: Arrays

FDR8508P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDR8508P Estimated Pricing

Qty Low High
176+ $1.70 $1.70

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDR8508P Features

  • Dual P-Channel MOSFET configuration.
  • 30V drain-source voltage rating.
  • 3A continuous drain current.
  • Low on-resistance of 52mΩ.
  • Logic level gate drive capability.

FDR8508P Applications

  • Used in load switching applications.
  • Ideal for DC/DC converter circuits.
  • Suitable for motor driving.
  • Power management in portable devices.

FDR8508P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDR8508P?

The drain-source voltage (Vdss) is 30V.

What is the continuous drain current rating?

The continuous drain current is 3A.

What is the on-resistance of the FDR8508P?

Maximum on-resistance is 52mΩ at Vgs=10V, Id=3A, and 86mΩ at Vgs=-4.5V, Id=3A.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (junction).

What package does the FDR8508P come in?

It is available in an 8-LSOP (SuperSOT-8) surface mount package.

Is the FDR8508P RoHS compliant?

RoHS status is listed as RoHS3 Compliant, but this is unverified and low confidence.

What is the gate charge of the FDR8508P?

Maximum gate charge is 12nC at Vgs=5V; typical gate charge is 8nC.

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