| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
300 pcs
|
300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDR840P is a P-Channel MOSFET from ON Semiconductor, built using the PowerTrench process for low on-resistance and fast switching. It is rated for a drain-source voltage of -20V and a continuous drain current of -10A. The device is optimized for gate drive voltages from 2.5V to 12V, with a maximum on-resistance of 12mΩ at Vgs = -4.5V and 17.5mΩ at Vgs = -2.5V. The gate threshold voltage ranges from -0.6V to -1.5V at Id = -250µA.
Key electrical characteristics include an input capacitance of 4481pF, output capacitance of 1532pF, and reverse transfer capacitance of 540pF at Vds = -10V. The total gate charge is 60nC at Vgs = -4.5V, enabling efficient switching in power management applications. The device is designed for use in load switches, battery protection circuits, and general power management.
The FDR840P is housed in a SuperSOT-8 surface mount package with 8 pins. It has a junction-to-ambient thermal resistance of 70°C/W and an operating junction temperature range of -55°C to +150°C. The package is suitable for automated assembly and is available in tape and reel packaging with 2500 units per reel.
| Qty | Low | High |
|---|---|---|
| 252+ | $1.19 | $1.19 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is -20V.
The continuous drain current (Id) is -10A at Ta=25°C.
The maximum on-resistance is 12mΩ at Vgs=-4.5V and Id=-10A, and 17.5mΩ at Vgs=-2.5V and Id=-8.4A.
The gate threshold voltage (Vgs(th)) ranges from -0.6V (minimum) to -1.5V (maximum) at Id=-250µA.
The FDR840P is available in a SuperSOT-8 surface mount package.
The operating and storage junction temperature range is -55°C to +150°C.
The maximum total gate charge (Qg) is 60nC at Vgs=-4.5V and Vds=-10V.