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FDPF8N50NZU FDPF8N50NZU is an N-Channel MOSFET with a drain-source voltage of 500V and continuous drain current of 6.5A. It features a low on-resistance of 1.2Ω and is housed in a TO-220F full pack package.
Mfr Part #:

FDPF8N50NZU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDPF8N50NZU is an N-Channel MOSFET with a drain-source voltage of 500V and continuous drain current of 6.5A. It features a low on-resistance of 1.2Ω and is housed in a TO-220F full pack package.
✓ Total Stock: 12,624 pcs
$ Price Range: $0.65

FDPF8N50NZU Available from 1 distributor

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12,624 pcs
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FDPF8N50NZU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDPF8N50NZU Description

Short technical summary and product information.

The FDPF8N50NZU is an N-Channel MOSFET from ON Semiconductor, part of the UniFET II Ultra FRFET series. It is designed for high-voltage switching applications with a maximum drain-source voltage of 500V and a continuous drain current of 6.5A at 25°C. The device features a typical on-resistance of 1.0Ω and a maximum of 1.2Ω at 4A, 10V.

 

This MOSFET incorporates advanced planar stripe and DMOS technology, offering low gate charge (typical 14nC) and low reverse transfer capacitance (typical 5pF). It is 100% avalanche tested with a single pulsed avalanche energy rating of 80mJ. The internal gate-source ESD diode allows it to withstand over 2kV HBM surge stress, enhancing reliability.

 

The device also features an improved body diode with a reverse recovery time of less than 50ns and a peak diode recovery dv/dt of 20V/ns, making it suitable for applications requiring efficient diode performance. It is RoHS compliant and comes in a TO-220F full pack through-hole package, with a standard tube packing of 50 units.

 

Typical applications include AC-DC power supplies, LCD/LED TVs, lighting, and uninterruptible power supplies. The operating temperature range is -55°C to 150°C, with a maximum power dissipation of 40W at 25°C case temperature.

FDPF8N50NZU Quick Information

Product Type: MOSFET
Canonical Name: FDPF8N50NZU – N-Channel MOSFET, 500V, 6.5A, TO-220F
Subcategory: Single MOSFET

FDPF8N50NZU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDPF8N50NZU Estimated Pricing

Qty Low High
1,000+ $0.65 $0.65

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDPF8N50NZU Features

  • 500V drain-source voltage rating.
  • 6.5A continuous drain current.
  • Low on-resistance: 1.0Ω typical.
  • Low gate charge: 14nC typical.
  • Fast body diode recovery <50ns.

FDPF8N50NZU Applications

  • Used in AC-DC power supplies.
  • Ideal for LCD/LED TV power.
  • Suitable for lighting ballasts.
  • Used in uninterruptible power supplies.

FDPF8N50NZU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

500V.

What is the package type?

TO-220-3 Full Pack (TO-220F).

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is this device RoHS compliant?

Yes, RoHS3 compliant.

What is the typical gate charge?

14 nC at Vgs = 10V.

What is the maximum on-resistance?

1.2Ω at 4A, 10V.

Does the MOSFET have avalanche capability?

Yes, single pulsed avalanche energy 80mJ, repetitive 13mJ.

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