Mfr Part #:

FDPF8N50NZ

N-Channel MOSFET rated for 500V drain-source voltage and 8A continuous drain current. Features low on-resistance of 850mOhm max and low gate charge of 18nC max.

✓ Total Stock: 4,049 pcs

$ Price Range: $1.23

FDPF8N50NZ Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	3,000 pcs On Request	3000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	1,049 pcs On Request	1049 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FDPF8N50NZ Description

Short technical summary and product information.

The FDPF8N50NZ is an N-Channel MOSFET from On Semiconductor's UniFET II family, designed for high-voltage switching applications. It offers a drain-source voltage rating of 500V and a continuous drain current of 8A at 25°C case temperature.

Key electrical characteristics include a maximum drain-source on-resistance of 850mOhm at Vgs=10V and Id=4A, and a typical gate charge of 14nC. The device is 100% avalanche tested and features improved dv/dt capability for robust performance in switching power converters.

The MOSFET is housed in a TO-220-3 Full Pack (TO-220F-3) through-hole package, providing isolated mounting. It is RoHS3 compliant and suitable for applications such as LCD/LED TV power supplies, uninterruptible power supplies, lighting, and AC-DC power converters.

FDPF8N50NZ Quick Information

Product Type: N-Channel MOSFET

Series: UniFET II

Canonical Name: FDPF8N50NZ N-Channel UniFET II MOSFET 500V 8A 850mOhm TO-220F

Subcategory: Single MOSFET

FDPF8N50NZ Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

FDPF8N50NZ Estimated Pricing

Qty	Low	High
1,000+	$1.23	$1.23

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDPF8N50NZ Features

N-Channel MOSFET rated for 500V drain-source voltage.
Continuous drain current of 8A at 25°C case temperature.
Low on-resistance of 850mOhm maximum at Vgs=10V.
Low gate charge of 18nC maximum for efficient switching.
RoHS3 compliant and 100% avalanche tested.

FDPF8N50NZ Applications

Ideal for LCD and LED TV power supplies.
Used in uninterruptible power supply designs.
Suitable for AC-DC power converter applications.
Applicable in lighting and electronic lamp ballasts.

FDPF8N50NZ FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the FDPF8N50NZ?

The drain-source voltage rating is 500V.

What is the continuous drain current rating?

The continuous drain current is 8A at Tc=25°C and 4.8A at Tc=100°C.

What is the maximum drain-source on-resistance?

The maximum drain-source on-resistance is 850mOhm at Vgs=10V and Id=4A.

What package does the FDPF8N50NZ come in?

It comes in a TO-220-3 Full Pack (TO-220F-3) through-hole package.

Is the FDPF8N50NZ RoHS compliant?

Yes, it is RoHS3 compliant as stated in the datasheet.

What is the operating temperature range?

The operating temperature range is -55°C to +150°C.

What is the gate charge of this MOSFET?

The typical gate charge is 14nC, with a maximum of 18nC at Vgs=10V.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	8 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC (Typ), 18 nC (Max)
Input Capacitance (Ciss) (Max) @ Vds	735 pF
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	40.3 W
Rds On (Max) @ Id, Vgs	770 mOhm (Typ), 850 mOhm (Max)
Storage Temperature	-55°C ~ 150°C
Supplier Device Package	TO-220F-3
Tape & Reel	No
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±25V
Vgs(th) (Max) @ Id	5 V